Indium tin oxide (ITO) thin films, used in many optoelectronic applications, are typically grown to a thickness of a maximum of a few hundred nanometres. In this work, the composition, microstructure and optical/electrical properties of thick ITO coatings deposited by radio frequency magnetron sputtering from a ceramic ITO target in an Ar/O2 gas mixture (total O2 flow of 1%) on unheated glass substrates are reported for the first time. In contrast to the commonly observed (200) or (400) preferential orientations in ITO thin films, the approximately 3.3 μm thick coatings display a (622) preferential orientation. The ITO coatings exhibit a purely nanocrystalline structure and show good electrical and optical properties, such as an electrical resistivity of 1.3 × 10?1 ?·cm, optical transmittance at 550 nm of ~60% and optical band gap of 2.9 eV. The initial results presented here are expected to provide useful information for future studies on the synthesis of high-quality thick ITO coatings.
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机译：在许多光电应用中使用的氧化铟锡（ITO）薄膜通常生长至最大值的厚度为几百纳米。在这项工作中，通过射频磁控管溅射的厚ITO涂层的组成，微观结构和光/电性能从加热玻璃基板上的Ar / O 2气体混合物中的陶瓷ITO靶溅射（总O2流量为1％）第一次。与ITO薄膜中的常用（200）或（400）的优先取向相比，约3.3μm厚的涂层显示（622）的优先取向。 ITO涂层表现出纯净纳米晶体结构，并显示出良好的电气和光学性能，例如电阻率为1.3×10？1？·cm，在550nm处的光透射率和2.9eV的光带隙。这里提出的初始结果预计将为未来的高品质厚ITO涂层的研究提供有用的信息。
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