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ZrO2-Sm2O3 Layer Growth Using the MOCVD Method at Low Temperatures and Under Reduced Pressure

机译:ZrO2-SM2O3层在低温下使用MOCVD方法和减压

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摘要

This work presents the results of structure, microstructure, and chemical composition investigations performed on ZrO2-Sm2O3 layers synthesized by MOCVD (metal-organic chemical vapor deposition) using Zr(tmhd)4 and Sm(tmhd)3 as reactants on quartz glass substrate. The molar percentage of Sm(tmhd)3 used to obtain the layers at both 500 and 550 °C was 14% and 22.75%, respectively. Synthesis parameters were selected so that the value of the extended criterion Grx/Rex2 (Gr—Grashof number, Re—Reynolds number, x—the distance from the gas inflow point to the CVD (MOCVD) reactor) could be maintained below 0.01. It was determined from XRD (X-ray diffraction) analyses that the layers deposited at 500 °C contained small amounts of a crystalline phase and the layers obtained at 550 °C contained greater amounts of the crystalline phase (solid solution). SEM (scanning electron microscope) observations have also shown that the crystalline phase is present in the layers synthesized at 500 °C, as well as at 550 °C. EDS (energy dispersive spectroscopy) studies have indicated that molar content of Sm2O3 in the crystalline phase is lower in comparison to the amount present in the respective amorphous phase. The larger the Sm2O3 content in the layer, the higher the growth rate.
机译:该工作介绍了在通过MOCVD(金属 - 有机化学气相沉积)合成的ZrO2-SM2O3层的结构,微观结构和化学成分研究的结果,使用Zr(TMHD)4和SM(TMHD)3作为石英玻璃基板上的反应物。用于在500和550℃下获得层的SM(TMHD)3的摩尔百分比分别为14%和22.75%。选择合成参数,使得扩展标准GRX / REX2(GR-GRASHOF编号,重新reynolds数,X-从气体流入点到CVD(MOCVD)反应器的距离)的值可以保持在0.01以下。从XRD(X射线衍射)确定,分析,沉积在500℃下沉积的层含有少量的结晶相,并且在550℃下获得的层含有较大量的结晶相(固溶体)。 SEM(扫描电子显微镜)观察结果还表明,结晶相的存在于500℃的层中,以及550℃。 EDS(能量分散光谱)研究表明,与各种无定形相中存在的量相比,结晶相中Sm 2 O 3的摩尔含量较低。层中的SM2O3含量越大,增长率越高。

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