Perfect absorption is one of the important application of epsilon-near-zero (ENZ) material. Weanalyze here the coherent perfect absorption (CPA) in single and bilayer of ENZ thin film of ITO byadmittance matching method. To enhance the absorption, a coupling layer of dielectric is to depositon the substrate with an ENZ ITO layer. CPA conditions are presented here in simulation resultswhich are obtained for p-polarized light. This mode is comparable with the transverse resonanceeffect. In order to obtain the symmetric results, the optimum polarization direction of illumination isalso extracted here. Employing the ENZ CPA property of ITO, this structure is applicable in opticalswitching, modulation and sensor at the telecommunication regime.
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