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首页> 外文期刊>Npj Quantum Materials >Metal-insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7
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Metal-insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re3Ge7

机译：金属绝缘体样过渡，超导圆顶和GA掺杂Re3Ge7中的拓扑电子结构7

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Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re3Ge7, which undergoes a second-order metal-insulator-like transition at ~58 K and is predicted to have a nontrivial band topology. It is found that the substitution of Ga for Ge leads to hole doping in Re3Ge7 xGax. As a consequence, the phase transition is gradually suppressed and disappears above x = 0.2. At this x value, superconductivity emerges and Tc exhibits a dome-like doping dependence with a maximum value of 3.37 K at x = 0.25. First principles calculations suggest that the phase transition in Re3Ge7 is associated with an electronic instability driven by Fermi-surface nesting and the nontrival band topology is preserved after Ga doping. Our results indicate that Ga-doped Re3Ge7 provides a rare opportunity to study the interplay between superconductivity and competing electronic states in a topologically nontrivial system.
机译：通过掺杂的化合物经常出现超导性，所述掺杂化合物显示集体相转变。然而，到目前为止，这尚未在拓扑材料中观察到。在这里，我们报告了在正交Re3Ge7中的Ga掺杂引起的超导诱导的超导，这在〜58k处经历了二阶金属 - 绝缘体样转变，并且预测具有非频带拓扑。结果发现，GA的替代对于GE导致RE3GE7 XGAX中的孔掺杂。结果，相变逐渐抑制并且消失在x = 0.2以上。在该X值下，出现的超导性和TC表现出圆顶状掺杂依赖性，最大值为3.37k，x = 0.25。第一个原理计算表明，RE3Ge7中的相位过渡与由费米表面嵌套驱动的电子不稳定性相关联，并且在GA掺杂后保留非移动带拓扑。我们的结果表明，GA-DOPED RE3GE7提供了一种难以研究超导和竞争电子状态在拓扑非学生系统中的相互作用的机会。

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