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首页> 外文期刊>International Journal of Electrochemical Science >Corrosion Resistance of Passive Film Formed on TA10 Dental Implant in Simulated Body Fluid
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Corrosion Resistance of Passive Film Formed on TA10 Dental Implant in Simulated Body Fluid

机译：在模拟体液中形成的无源膜的耐腐蚀性

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The passive behavior of TA10 dental implant was systematacially studied by measuring open circuit potential (OCP), potentiodynamic polarization, electrochemical impedance spectroscopy (EIS) and Mott-Schottky (MS) curves in simulated body fluid (SBF) for different immersion times. The results showed that the OCP of TA10 dental implant is positively shifted with the extension of immersion time, and stabilizes at about 35 mVSCE after immersing for 1 day; the typical metal passive polarization curve could be observed in SBF with a wide passive potential range, the maintaining passivity and the selfcorrosion current density of the TA10 implant decreases with the extension of immersion time and the self-corrosion current density decreased to 0.07 μA/cm2 after 3 days of immersion; the EIS impedance modulus of the passive film is about 105 Ω·cm2 order of magnitude at the initial stage of immersion and increases sharply with extension of immersion times and finally stabilizes at about 3×106 Ω·cm2 after 3 days of immersion; the passive film is characterized by n-type semiconductor and the number of defects decreases with the extension of immersion time, a stable corrosion resistant passive film of TA10 implant could be formed after 3 days of immersion.
机译：通过测量不同浸入时间的模拟体液（SBF）中的开路电位（OCP），电位偏振，电化学阻抗光谱（EIS）和Mott-Schottky（MS）曲线来系统地研究TA10牙科植入物的被动行为。结果表明，Ta10牙科植入物的OCP随着浸渍时间的延伸而正换档，浸入1天后约35 mVSCE稳定;在SBF中可以观察到典型的金属无源偏振曲线，具有宽的无源电位范围，保持速率和TA10植入物的自腐蚀电流密度随着浸渍时间的延伸而减小，自腐蚀电流密度降低至0.07μA/ cm2浸泡3天后;无源膜的EIS阻抗模量在浸渍初始阶段的初始阶段为约105Ω·cm2级，并且随着浸入时间的延伸速度急剧增加，并且在浸入3天后最终稳定在约3×106Ω·cm 2的情况下;被动膜的特征在于n型半导体，并且缺陷的次数随着浸入时间的延伸而降低，在浸没3天后可以形成Ta10植入物的稳定耐腐蚀无源膜。

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