首页> 外文期刊>Physical review, D >Plasmon production from dark matter scattering
【24h】

Plasmon production from dark matter scattering

机译:从暗物质散射的等离子体生产

获取原文
           

摘要

We present a first calculation of the rate for plasmon production in semiconductors from nuclei recoiling against dark matter. The process is analogous to bremsstrahlung of transverse photon modes, but with a longitudinal plasmon mode emitted instead. For dark matter in the 10?MeV—1?GeV mass range, we find that the plasmon bremsstrahlung rate is 4–5 orders of magnitude smaller than that for elastic scattering, but 4–5 orders of magnitude larger than the transverse bremsstrahlung rate. Because the plasmon can decay into electronic excitations and has characteristic energy given by the plasma frequency ω p , with ω p ≈ 16 ? ? eV in Si crystals, plasmon production provides a new signature and method to detect nuclear recoils from sub-GeV dark matter.
机译:我们介绍了对来自暗物质的核的半导体中的等离子体产生速率的第一次计算。 该过程类似于横向光子模式的Bremsstrah隆起,但是透过纵向等离子体模式。 对于10?MEV-1?GEV质量范围的暗物质,我们发现等离子体Bremsstrahlung率小于弹性散射的4-5个数量级,但大于横向Bremsstrahlung率的4-5个数量级。 因为等离子体可以腐烂进入电子激发并具有等离子体频率ωp给出的特征能量,ωp≈16? 还 在Si晶体中,等离子体产量提供了一种新的签名和方法,以检测来自亚gev暗物质的核反冲。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号