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Structural and Electrochemical Properties of Scandia Alumina Stabilized Zirconia Thin Films

机译：Scandia氧化铝稳定氧化锆薄膜的结构和电化学性能

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This work presents a systematic investigation of scandia alumina stabilized zirconia (ScAlSZ, composition: ZrO2:Sc2O3:Al2O3 93:6:1 wt.%) thin films (~2 μm). Thin films were formed by the e-beam evaporation method on 450 °C substrates. The influence of Al concentration on thin film microstructure, structure, and electrochemical properties was characterized by EDS, XRD, Raman, and EIS methods. It was found that the aluminum concentration in the deposited thin films decreased with an increase in the deposition rate. The concentration of Al changed from 15.9 to 3.8 at.% when the deposition rates were 0.2 and 1.6 nm/s, respectively. The crystallinity of the thin films depended strongly on the concentration of Al, resulting in an amorphous phase when Al concentration was 22.2 at.% and a crystalline phase when Al concentration was lower. ScAlSZ thin films containing 15.9 at.% of Al had monoclinic and tetragonal phases, while thin films with 1.6 and 3.8 at.% of Al had a mixture of cubic, tetragonal, and monoclinic phases. The phase transition was observed during the thermal annealing process. Cubic and rhombohedral phases formed in addition to monoclinic and tetragonal phases appeared after annealing ScAlSZ thin films containing 15.9 and 22.2 at.% of aluminum. The highest total ionic conductivity (σbulk = 2.89 Sm?1 at 800 °C) was achieved for ScAlSZ thin films containing 3.8 at.% of Al. However, thin films containing a higher concentration of aluminum had more than 10 times lower total conductivity and demonstrated changes in activation energy at high temperatures (560 °C). Activation energies changed from ~1.10 to ~1.85 eV.
机译：这项工作提出了对Scandia氧化铝稳定的氧化锆的系统调查（Scalsz，组合物：ZrO2：SC2O3：Al2O3 93：6：1wt.％）薄膜（〜2μm）。通过在450℃的基材上通过电子束蒸发方法形成薄膜。 Al浓度对薄膜微结构，结构和电化学性质的影响特征在于EDS，XRD，拉曼和EIS方法。发现沉积薄膜中的铝浓度随着沉积速率的增加而降低。 Al的浓度从15.9〜3.8变为0.％，当沉积速率分别为0.2和1.6nm / s时。薄膜的结晶度强烈地依赖于Al的浓度，当Al浓度为22.2时，导致非晶相。当Al浓度较低时％和结晶相。含有15.9℃的硅溶液薄膜。占Al的％含有单斜晶和四方相，而具有1.6和3.8的薄膜。％Al的含有立方，四方和单斜相的混合物。在热退火过程中观察到相转变。除了含有15.9和22.2的退火氧化硅酸盐薄膜之后，除了单斜晶和四方相之外，还出现了立方体和菱形相。铝的％。对于含有3.8at，含有3.8％的硅胶薄膜，实现了最高的总离子电导率（σbulk= 2.89 sm 2 sm 2。然而，含有较高浓度铝浓度的薄膜具有超过总电导率的10倍以上，并且在高温下展示了活化能量的变化（＆ 560℃）。激活能量从〜1.10变为〜1.85 ev。

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