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首页> 外文期刊>Coatings >Evaluation of SnS:Cu Thin Film Properties Obtained by USP Technique to Implement It as an Absorbent Layer in Solar Cells Using SCAPS
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Evaluation of SnS:Cu Thin Film Properties Obtained by USP Technique to Implement It as an Absorbent Layer in Solar Cells Using SCAPS

机译：SNS的评价：USP技术获得的Cu薄膜特性，用剪刀将其作为太阳能电池中的吸收层实施

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Tin sulfide doped with copper (SnS:Cu) thin films were deposited on glass substrates by the ultrasonic spray pyrolysis (USP) technique at different concentration ratios (y = [Cu]/[Sn] = 0% (undoped), 2%, 5% and 10%). The aim of this work is to analyze the effect of copper on structural, morphological, and optoelectronic properties of SnS:Cu and discuss their possible application as an absorber layer in a solar cell structure proposed which is simulated using SCAPS software. X-ray diffraction (XRD) reveals an orthorhombic structure in the undoped sample and a cubic structure in doped ones. Raman spectroscopy suggests a possible unit cell size change due to the addition of Cu. Scanning electron microscopy (SEM) shows growth in grain density with an increasing y. Image analysis based on second-order features was used to discuss grain distribution. UV-VIS spectroscopy helps to find an increase of bandgap for the doped samples when copper concentration increases, going from 1.82 eV in the doped film y = 2% to 2.2 eV in the 10% doped samples. A value of 3.51 eV was found for the undoped sample y = 0%. A rise in both carrier concentration and mobility but a decrease in resistivity when y is increased was observed through the Hall–Van der Pauw technique. Simulations by SCAPS helped conclude that considering the material thickness, the SnS:Cu compound can be an alternative for implementation in the manufacturing of solar cells as an absorber layer since it is possible to obtain the optoelectronic properties necessary using the UPS economical technique.
机译：用不同浓度比的超声波喷雾热解（USP）技术沉积掺杂有铜（SNS：Cu）薄膜的硫化物（Y = [Cu] / [Sn] = 0％（未掺杂），2％， 5％和10％）。这项工作的目的是分析铜对SNS的结构，形态学和光电性质的影响：Cu并在所提出的太阳能电池结构中讨论它们作为吸收层的应用，该模拟使用剪刀软件模拟。 X射线衍射（XRD）在未掺杂的样品和掺杂物中的立方结构中显示出正晶状体结构。拉曼光谱表明，由于加入Cu，可能的单元尺寸变化。扫描电子显微镜（SEM）显示晶粒密度的生长，随着Y增加。基于二阶功能的图像分析用于讨论谷物分布。 UV-Vis光谱有助于在铜浓度增加时，在掺杂薄膜Y = 2％至2.2eV中，在10％掺杂样品中，从1.82eV进入掺杂样品的带隙的增加。发现不掺杂的样品Y = 0％的值为3.51eV。通过Hall-Van der Pauw技术观察到y增加时，载流子浓度和移动性的增加，而是在y增加时的降低。缝制的仿真帮助得出结论，考虑到材料厚度，SNS：Cu化合物可以是在太阳能电池制造中实现作为吸收层的替代方案，因为可以获得使用UPS经济技术所需的光电性能。

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