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首页> 外文期刊>Coatings >Hollow IF-MoS2/r-GO Nanocomposite Filled Polyimide Coating with Improved Mechanical, Thermal and Tribological Properties
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Hollow IF-MoS2/r-GO Nanocomposite Filled Polyimide Coating with Improved Mechanical, Thermal and Tribological Properties

机译：中空IF-MOS2 / R-GO纳米复合材料填充聚酰亚胺涂层，具有改进的机械，热和摩擦学特性

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摘要

Polyimide (PI) is one of the most excellent polymers for coating. However, the high friction coefficient and the high wear rate of pure PI limit its further applications. In this work, the hollow inorganic fullerene-like MoS2/reduced graphene oxide (HIF-MoS2/r-GO) nanocomposite filled PI coating is prepared by in situ polymerization. Reinforcement in mechanical strength and thermal stability is realized on the PI composite coating with incorporation of HIF-MoS2/r-GO, which performs better than carbon nanofiber (CNF). Reduced elastic modulus and hardness of HIF-MoS2/r-GO/PI coating is increased by 8.3% and 4.8%, respectively. The addition of HIF-MoS2/r-GO also results in 24% higher residual mass at 800 °C than CNF. Tribological study indicates that, HIF-MoS2/r-GO/PI achieves a wear rate reduction of 79% compared with pure PI under dry sliding condition, which is much more effective than other nanofillers including CNF, r-GO nanosheets and MoS2 nanoparticles. Under ionic liquid-lubricated condition, the presence of HIF-MoS2/r-GO in PI results in a 30% reduction in wear rate and 10% reduction in friction coefficient as compared to pure PI. It is thought that the HIF-MoS2/r-GO in PI can be slowly released to the frictional interface and form a protective film during sliding, in this way the aggregation problem is successfully solved.
机译：聚酰亚胺（PI）是涂层最优异的聚合物之一。然而，高摩擦系数和纯PI的高磨损率限制了其进一步的应用。在这项工作中，通过原位聚合制备了中空无机富勒烯样MOS2 /氧化石墨烯（HIF-MOS2 / R-GO）纳米复合填充的PI涂层。在PI复合涂层中实现了机械强度和热稳定性的加固，其结合HIF-MOS2 / R-GO，其比碳纳米纤维（CNF）更好。降低HIF-MOS2 / R-GO / PI涂层的弹性模量和硬度分别增加了8.3％和4.8％。加入HIF-MOS2 / R-GE也会导致800°C的残余物质高出24％，而不是CNF。摩擦学研究表明，与干式滑动条件下的纯PI相比，HIF-MOS2 / R-GO / PI与纯PI相比，耐磨速率降低79％，这比其他纳米填充物更有效，包括CNF，R-GO纳米片和MOS2纳米颗粒。在离子液体润滑条件下，与纯PI相比，HIF-MOS2 / R-GE的存在导致磨损率降低30％，摩擦系数降低10％。据认为，在PI中可以缓慢地释放到摩擦界面上并在滑动期间形成保护膜，以这种方式成功解决了聚集问题。

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