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首页> 外文期刊>Quantum Beam Science >Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments
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Lamellar Orientation of a Block Copolymer via an Electron-Beam Induced Polarity Switch in a Nitrophenyl Self-Assembled Monolayer or Si Etching Treatments

机译：通过电子束诱导极性开关在硝基苯基自组装单层或Si蚀刻处理中的嵌段共聚物的层状方向取向

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Directed self-assembly (DSA) was investigated on self-assembled monolayers (SAMs) chemically modified by electron beam (EB) irradiation, which is composed of 6-(4-nitrophenoxy) hexane-1-thiol (NPHT). Irradiating a NPHT by EB could successfully induce the orientation and selective patterning of block copolymer domains. We clarified that spatially-selective lamellar orientations of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) could be achieved by a change of an underlying SAM. The change of an underlying SAM is composed of the transition of an NO2 group to an NH2 group, which is induced by EB. The modification in the polarity of different regions of the SAM with EB lithography controlled the lamellar orientation of PS-b-PMMA. The reduction of the NPHT SAM plays an important role in the orientation of block copolymer. This method might significantly simplify block copolymer DSA processes when it is compared to the conventional DSA process. By investigating the lamellae orientation with EB, it is clarified that only suitable annealing temperatures and irradiation doses lead to the vertical orientation. We also fabricated pre-patterned Si substrates by EB lithographic patterning and reactive ion etching (RIE). DSA onto such pre-patterned Si substrates was proven to be successful for subdivision of the lithographic patterns into line and space patterns.
机译：通过电子束（EB）照射在化学改性的自组装单层（SAMS）上研究了定向自组装（DSA），其由6-（4-硝基苯氧基）己烷-1-硫醇（NPHT）组成。通过EB照射NPHT可以成功地诱导嵌段共聚物结构域的取向和选择性图案化。我们阐明了聚苯乙烯 - 嵌段 - 聚（甲基丙烯酸甲酯）（PS-B-PMMA）的空间选择性层状取向可以通过潜在的山姆的变化来实现。底层SAM的变化由NO2组转变为NH2组，由EB引起的。使用EB光刻的SAM的不同区域的极性的修改控制了PS-B-PMMA的层状取向。 NPHT SAM的减少在嵌段共聚物的方向上起重要作用。当与传统DSA过程相比，该方法可以显着简化嵌段共聚物DSA过程。通过研究与EB的薄片取向，阐明仅适当的退火温度和辐射剂量导致垂直取向。我们还通过EB光刻图案化和反应离子蚀刻（RIE）制造了预先图案的SI基板。被证明，DSA在这种预先绘制的Si基板上被成功地将光刻图案分成线条和空间图案。

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