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首页> 外文期刊>IEEE Transactions on Dielectrics and Electrical Insulation >Reverse recovery characteristics of high power thyristors in HVDC converter valve
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Reverse recovery characteristics of high power thyristors in HVDC converter valve

机译：高压直流换流阀中大功率晶闸管的反向恢复特性

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摘要

The reverse recovery characteristics of high power thyristor are important device physical properties influencing the reliable operation of HVDC thyristor valve. In this paper, the reverse recovery characteristics of high power thyristor are investigated from the aspects of both external circuit and internal device physics. By analyzing the depletion of carrier during the reverse recovery of thyristors, a determination method of minority carrier lifetime is proposed to construct a connection between the macroscopic reverse recovery characteristics and the microscopic device physical parameter such as minority carrier lifetime. Meanwhile, the influence of the current with a power frequency on the characteristics of reverse recovery especially on the reverse recovery time is investigated experimentally, and the relationship between external circuit and internal physical property is discussed. The results show that thyristor reverse recovery storage time is independent of sinusoidal currents under power frequency, which is approximately equal to its minority carrier lifetime in the base region of high power thyristors; Finally, the influences of reverse recovery characteristics on the protection strategy of thyristor unit are analyzed, and the related methods of thyristor unit routine test are also discussed. This work will be beneficial to the operational maintenance of thyristor valve in power system.
机译：大功率晶闸管的反向恢复特性是影响HVDC晶闸管阀可靠运行的重要器件物理性能。本文从外部电路和内部器件物理的角度研究了大功率晶闸管的反向恢复特性。通过分析晶闸管反向恢复过程中载流子的损耗，提出了确定少数载流子寿命的方法，以建立宏观反向恢复特性与微观器件物理参数（如少数载流子寿命）之间的联系。同时，实验研究了工频电流对反向恢复特性的影响，特别是对反向恢复时间的影响，并探讨了外部电路与内部物理特性之间的关系。结果表明，晶闸管反向恢复存储时间与工频下的正弦电流无关，大约等于其在大功率晶闸管基极区域的少数载流子寿命。最后，分析了反向恢复特性对晶闸管单元保护策略的影响，并讨论了晶闸管单元常规测试的相关方法。这项工作将有利于电力系统晶闸管阀的运行维护。

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  • 来源
  • 作者

    Ke Yue; Lei Pang; Haoyang You; Shaobin Li; Dezhi Kong; Yuan Li; Qiaogen Zhang; Longchen Liu;

  • 作者单位

    State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, PR China;

    State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, PR China;

    State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, PR China;

    State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, PR China;

    State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, PR China;

    State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, PR China;

    State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, PR China;

    State Grid Sichuan Electric Power Research Institute, Chengdu, 610072, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thyristors; Mathematical model; Charge carrier lifetime; HVDC transmission; Valves; Transient analysis; Voltage measurement;

    机译：晶闸管;数学模型;电荷载流子寿命;高压直流输电;阀门;瞬态分析;电压测量;

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