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首页> 外文期刊>IEEE Transactions on Dielectrics and Electrical Insulation >Effects of crystal morphology on space charge transportation and dissipation of SiC/silicone rubber composites
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Effects of crystal morphology on space charge transportation and dissipation of SiC/silicone rubber composites

机译：晶体形态对SiC /硅橡胶复合材料空间电荷迁移和耗散的影响

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摘要

The addition of silicon carbide (SiC) micro powder into silicone rubber (SiR) matrix has been found to introduce a marked nonlinear conductivity into the resulting composites, without a degradation of the insulating properties under low electric field. Owing to these properties, the SiR-based nonlinear conductive composites have a potential use as the field grading material (FGM) layer in high voltage direct current (HVDC) cable accessories, which is employed to uniform electric field and suppress charge accumulation at the interface between crosslinked polyethylene (XLPE) and accessory insulation. In this paper, the space charge transportation and dissipation behaviors of SiC/SiR composites were investigated by pulsed electro-acoustic (PEA) test, in view of the effects of SiC filler size and crystal morphology. The results indicated that with the enhancement of nonlinear conductivity, the charge transportation and dissipation processes were accelerated. Compared with α-SiC particles, the β-SiC whiskers could provide a larger nonlinear conductivity. Meanwhile, the trap level distributions of SiC/SiR composites showed that the β-SiC whiskers introduced a shallower trap level at 0.81 eV than the α-SiC particles (0.85 eV). In addition, for the α-SiC particles filled composites, with the increase of the filler size from 0.45 μm to 5.0 μm, the shallow trap density increased, and the deep trap density decreased, resulting in an enhancement of space charge dissipation.
机译：已发现将碳化硅（SiC）微粉添加到硅橡胶（SiR）基体中会在所得复合物中引入明显的非线性电导率，而在低电场下不会降低绝缘性能。由于这些特性，基于SiR的非线性导电复合材料有可能用作高压直流（HVDC）电缆附件中的场分级材料（FGM）层，该层可用于均匀化电场并抑制界面处的电荷积累在交联聚乙烯（XLPE）和附件绝缘层之间。鉴于SiC填料尺寸和晶体形态的影响，本文通过脉冲电声（PEA）试验研究了SiC / SiR复合材料的空间电荷传输和耗散行为。结果表明，随着非线性电导率的提高，电荷的传输和耗散过程得以加速。与α-SiC颗粒相比，β-SiC晶须可提供更大的非线性电导率。同时，SiC / SiR复合材料的陷阱能级分布表明，β-SiC晶须在0.81eV处比α-SiC粒子（0.85eV）引入了更浅的陷阱能级。另外，对于填充有α-SiC颗粒的复合材料，随着填料尺寸从0.45μm增加到5.0μm，浅陷阱能级增加，而深陷阱能级降低，导致空间电荷耗散的增加。

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  • 作者

    Z. L. Li; B. X. Du; Z. R. Yang; J. Li;

  • 作者单位

    Key Laboratory of Smart Grid of Education Ministry, School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China;

    Key Laboratory of Smart Grid of Education Ministry, School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China;

    Key Laboratory of Smart Grid of Education Ministry, School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China;

    Key Laboratory of Smart Grid of Education Ministry, School of Electrical and Information Engineering, Tianjin University, Tianjin 300072, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Conductivity; Silicon carbide; Space charge; Electric fields; Crystals; Morphology; Electrodes;

    机译：电导率;碳化硅;空间电荷;电场;晶体;形态学;电极;

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