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首页> 外文期刊>IEEE Transactions on Dielectrics and Electrical Insulation >Effects of AC and DC corona on the surface properties of silicone rubber: Characterization by contact angle measurements and XPS high resolution scan
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Effects of AC and DC corona on the surface properties of silicone rubber: Characterization by contact angle measurements and XPS high resolution scan

机译：交流和直流电晕对硅橡胶表面性能的影响：通过接触角测量和XPS高分辨率扫描进行表征

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摘要

This study utilized a multi-needle corona electrode system to investigate the influence of AC and DC coronas on the surface properties of high temperature vulcanized (HTV) silicone rubber. Contact angle measurements and X-ray photoelectron spectroscopy (XPS) analysis were performed to characterize the chemical structure and hydrophobicity changes in state of the silicone rubber surface after corona exposure. The results indicated that the effects of AC corona were greater than that of DC corona, and the effects of negative DC corona were slightly greater than that of positive DC corona. XPS results showed that the C elemental content on the silicone rubber surface decreased, whereas the O elemental content increased. High-resolution scan on Si 2p XPS spectra proved that surface oxidation occurred during corona exposure and caused the high binding energies of Si atoms and silica-like layer. High-resolution C 1s XPS spectra showed that corona exposure destroyed the Si-CH3 groups on the surface. Some C-O and C=O bonds appeared following the corona exposure. High-resolution O 1s XPS spectra confirmed the formation of Si-OH groups and chemically absorbed water, which was ignored in the past research. Chemically absorbed water was detected as one of the essential factors that caused the loss of hydrophobicity of silicone rubber after corona exposure, together with Si-OH groups and silica-like layer.
机译：这项研究利用多针电晕电极系统研究了交流和直流电晕对高温硫化（HTV）硅橡胶表面性能的影响。进行接触角测量和X射线光电子能谱（XPS）分析，以表征电晕暴露后硅橡胶表面状态的化学结构和疏水性变化。结果表明，交流电晕的影响大于直流电晕，负的直流电晕的影响略大于正的直流电晕。 XPS结果表明，硅橡胶表面的C元素含量降低，而O元素含量增加。对Si 2p XPS光谱的高分辨率扫描证明，在电晕暴露过程中发生了表面氧化，并引起了Si原子和类二氧化硅层的高结合能。高分辨率的C 1s XPS光谱表明，电晕暴露破坏了表面的Si-CH3基团。电晕暴露后出现一些C-O和C = O键。高分辨率的O 1s XPS光谱证实了Si-OH基团和化学吸收水的形成，这在过去的研究中被忽略。检测到化学吸收的水是导致电晕暴露后硅橡胶，Si-OH基团和类二氧化硅层一起丧失疏水性的重要因素之一。

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