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机译:程序/擦除循环对可重构门控肖特基二极管低频噪声特性的影响
Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea;
Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea;
Kookmin Univ Sch Elect Engn Seoul 02707 South Korea;
Samsung Elect Flash Technol Dev Team Suwon 16677 South Korea;
Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea;
Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea;
Reconfigurable FET (RFET); low-frequency noise; neuromorphic system; program/erase (P/E) cycling;
机译:门控肖特基二极管低频噪声特性研究
机译:可变幅度低频电荷泵技术研究了编程/擦除周期对SONOS闪存单元中ONO堆栈层的影响
机译:在编程/擦除操作下具有Trigate纳米线结构的SONOS-TFT中的低频噪声
机译:AlGaN势垒凹槽对带有栅极边缘终端的AlGaN / GaN肖特基势垒二极管的直流特性和动态特性的影响
机译:异质材料启发的振动冲击结构的低频声衰减特性
机译:GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
机译:沉积在中温缓冲层上的Ni / GaN肖特基二极管上的低频噪声表征
机译:用接触几何控制Gaas微波肖特基二极管电特性:间隙二极管