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首页> 外文期刊>IEEE Electron Device Letters >Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes
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Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes

机译:程序/擦除循环对可重构门控肖特基二极管低频噪声特性的影响

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摘要

In this work, the low-frequency noise (LFN) characteristics of reconfigurable field-effect-transistor (RFET), gated Schottky Diode (GSD), are investigated. The GSD has a different 1/f noise origin depending on the operation mode (p-or n-type FET mode) and current (I-O) region (low or high I-O region). Depending on the 1/f noise origin, the effects of the program/erase (P/E) cycling differs. The n-type mode GSD operating in the high I-O region whose 1/f noise is originated from the carrier number fluctuation (CNF) shows the largest noise increase after the 10(4) P/E cycling.
机译:在这项工作中,研究了可重构场效应晶体管(RFET),门控Schottky二极管(GSD)的低频噪声(LFN)特性。 GSD具有不同的1 / f噪声来源,具体取决于操作模式(P-OR N型FET模式)和电流(I-O)区域(低或高I-O区域)。 根据1 / f噪声源,程序/擦除(P / E)循环的影响不同。 在1 / f噪声的高I-O区域中运行的n型模式GSD源自载波号波动(CNF)显示10(4)P / E循环后的最大噪声增加。

著录项

  • 来源
    《IEEE Electron Device Letters》 |2021年第6期|863-866|共4页
  • 作者单位

    Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea;

    Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea;

    Kookmin Univ Sch Elect Engn Seoul 02707 South Korea;

    Samsung Elect Flash Technol Dev Team Suwon 16677 South Korea;

    Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea;

    Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Reconfigurable FET (RFET); low-frequency noise; neuromorphic system; program/erase (P/E) cycling;

    机译:可重新配置的FET(RFET);低频噪声;神经形态系统;程序/擦除(P / E)循环;

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