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首页> 外文期刊>Electron Device Letters, IEEE >Development of Silicon Nanowire-Based NEMS Absolute Pressure Sensor Through Surface Micromachining
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Development of Silicon Nanowire-Based NEMS Absolute Pressure Sensor Through Surface Micromachining

机译：通过表面微加工技术开发基于硅纳米线的NEMS绝对压力传感器

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摘要

This letter reports on a nano-electro-mechanical system (NEMS) pressure sensor with p-doped silicon nanowires (average cross-sectional area ~100 nm2) as piezoresistive sensing elements. Taking advantage of surface micromachining, an absolute pressure-sensing device is developed using front-side isotropic etching. In contrast to the previously reported silicon nanowire (SiNW) pressure sensor processed with bulk micromachining through the backside deep reactive ion etching (DRIE), nonlinearity has been reduced to 0.31% (BFSL). In addition, the performance variations across the wafer have been significantly reduced to 6% in comparison with a 33% sensitivity fluctuation across the 8-inch wafer reported in our early work fabricated by a DRIE process. After front-side vacuum sealing, temperature-induced performance degradation has also been minimized. Moreover, the dramatic geometry downsizing (device footprint sim 385~mu text{m}^{mathrm {mathbf {2}}}∼385 μm2 ) validates the scalability of the SiNW-based NEMS sensor. With excellent uniformity, the SiNW-based sensor can be commercially manufactured on an 8-inch wafer at lower cost with high yield.
机译：这封信报道了一种纳米机电系统（NEMS）压力传感器，其中以p掺杂的硅纳米线（平均横截面约为100 nm2）作为压阻传感元件。利用表面微机械加工的优势，使用正面各向同性蚀刻技术开发了一种绝对压力传感装置。与先前报道的通过背面深反应离子刻蚀（DRIE）进行整体微加工的硅纳米线（SiNW）压力传感器相比，非线性度已降低至0.31％（BFSL）。此外，与通过DRIE工艺制造的早期工作中报告的8英寸晶圆的灵敏度波动33％相比，晶圆的性能变化已大大降低至6％。经过正面真空密封后，温度引起的性能下降也已降至最低。此外，大幅缩小的几何尺寸（设备占用空间385〜mu text {m} ^ {mathrm {mathbf {2}}}〜385μm2）验证了基于SiNW的NEMS传感器的可扩展性。凭借出色的均匀性，基于SiNW的传感器可在8英寸晶圆上以较低的成本进行商业生产，且产量高。

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