Hardening of Split-Gate Power UMOSFET Against High-Power Microwave Radiation

著录项

• 来源
  《IEEE Electron Device Letters》 |2017年第8期|1067-1070|共4页
• 作者

  Jun-Peng Fang; Ying Wang; Yue Hao; Jun Liu; Ling-Ling Sun;

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• 作者单位

  College of Information and Communication Engineering, Harbin Engineering University, Harbin, China;

  Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China;

  Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China;

  Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China;

  Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Logic gates; Standards; Substrates; Current density; Radiation hardening (electronics); Mathematical model; Electric fields;

  机译：逻辑门;标准;基板;电流密度;辐射硬化（电子）;数学模型;电场;