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首页> 外文期刊>IEEE Electron Device Letters >On the Identification of Buffer Trapping for Bias-Dependent Dynamic of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier
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On the Identification of Buffer Trapping for Bias-Dependent Dynamic of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier

机译：基于AlGaN：C背势垒的AlGaN / GaN肖特基势垒二极管随偏压变化的缓冲阱的识别

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摘要

In this letter, we identified a dominant buffer trapping causing a bias-dependent dynamic for AlGaN/GaN Schottky barrier diodes (SBDs) fabricated on a C-doped AlGaN buffer as back-barrier. Current transient measurements at various temperatures were performed simultaneously on an AlGaN/GaN SBD and a transmission line model (TLM) structure based on the AlGaN/GaN heterojunction. During the stress of the TLM structure, the two Ohmic contacts are biased at the same voltage forming an equipotential surface while creating a uniform vertical electrical field to induce buffer trapping. We extracted the same dominant trap level of eV from the current transient spectroscopy on both the AlGaN/GaN SBD and the TLM structure after stressing at −100 V, indicating that the increase in the dynamic of the diode is due to the electron trapping in the buffer layers. More electron filling of this buffer trap occurs at higher stressing voltages (from −50 to −200 V), which reflects in an enhanced current-transient amplitude at the same time-constant under higher stressing voltages.
机译：在这封信中，我们确定了占主导地位的缓冲陷阱，从而导致了在C掺杂AlGaN缓冲层上制造的AlGaN / GaN肖特基势垒二极管（SBD）的偏压依赖性动态，作为反向势垒。同时在AlGaN / GaN SBD和基于AlGaN / GaN异质结的传输线模型（TLM）结构上同时进行了各种温度下的电流瞬态测量。在TLM结构受到应力的过程中，两个Ohmic触点在相同的电压下偏置，从而形成一个等电位表面，同时产生均匀的垂直电场以引起缓冲剂捕获。在-100V应力下，我们从电流瞬态光谱学上从AlGaN / GaN SBD和TLM结构上提取了相同的主要eV陷阱能级，这表明二极管的动态性增加是由于电子在阱中的俘获所致。缓冲层。在较高的应力电压（-50至-200 V）下，更多的电子充满了该缓冲阱，这在较高的应力电压下以相同的时间常数反映出增强的电流瞬态幅度。

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