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首页> 外文期刊>Electron Device Letters, IEEE >High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/ $hbox{SiN}_{x}$ Passivation
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High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs With AlN/ $hbox{SiN}_{x}$ Passivation

机译：具有AlN /的高压（600V）低泄漏低电流塌陷AlGaN / GaN HEMTs $ hbox {SiN} _ {x} $ < / tex> 钝化

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摘要

An effective passivation technique that yields low off-state leakage and low current collapse simultaneously in high-voltage (600-V) AlGaN/GaN high-electron-mobility transistors (HEMTs) is reported in this letter. The passivation structure consists of an AlN/ $hbox{SiN}_{x}$ stack with 4-nm AlN deposited by plasma-enhanced atomic layer deposition and 50-nm $hbox{SiN}_{x}$ deposited by PECVD. The AlN/ $hbox{SiN}_{x}$-passivated HEMTs with a gate–drain distance of 15 $muhbox{m}$ exhibit a high maximum drain current of 900 mA/mm, a low off-state current of 0.7 $muhbox{A/mm}$ at $V_{DS} = hbox{600} hbox{V}$, and a steep subthreshold slope of 63 mV/dec. Compared with the static on-resistance of 1.3 $hbox{m}Omega cdot hbox{cm}^{2}$, the dynamic on-resistance after high off-state drain bias stress at 650 V only increases to 2.1 $hbox{m}Omega cdot hbox{cm}^{2}$. A high breakdown voltage of 632 V is achieved at a drain leakage current of 1 $muhbox{A/mm}$ .
机译：这封信报道了一种有效的钝化技术，该技术在高压（600-V）AlGaN / GaN高电子迁移率晶体管（HEMT）中同时产生低的关态泄漏和低的电流崩塌。钝化结构由AlN / $ hbox {SiN} _ {x} $堆栈组成，该堆栈具有通过等离子体增强原子层沉积沉积的4 nm AlN和通过PECVD沉积的50 nm $ hbox {SiN} _ {x} $。栅-漏极距离为15 $ muhbox {m} $的AlN / $ hbox {SiN} _ {x} $钝化HEMT的最大漏极电流为900 mA / mm，关闭状态电流为0.7在$ V_ {DS} = hbox {600} hbox {V} $处的$ muhbox {A / mm} $和63 mV / dec的陡峭亚阈值斜率。与1.3 $ hbox {m} Omega cdot hbox {cm} ^ {2} $的静态导通电阻相比，在650 V高断开状态漏极偏置应力后，动态导通电阻仅增加到2.1 $ hbox {m } Omega cdot hbox {cm} ^ {2} $。在漏极漏电流为1 $ muhbox {A / mm} $时，可以实现632 V的高击穿电压。

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