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首页> 外文期刊>Electron Device Letters, IEEE >Dual Read Method by Capacitance Coupling Effect for Mode-Disturbance-Free Operation in Channel-Recessed Multifunctional Memory
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Dual Read Method by Capacitance Coupling Effect for Mode-Disturbance-Free Operation in Channel-Recessed Multifunctional Memory

机译：通道耦合多功能存储器中基于电容耦合效应的双读方法实现无模式干扰操作

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摘要

A channel-recessed multifunctional memory (MFM) device was investigated, and a dual read method using a capacitance coupling effect was developed. The nonvolatile memory (NVM) cells using a $hbox{SiO}_{2}hbox{/Si}_{3}hbox{N}_{4}hbox{/SiO}_{2}$ gate insulator and the high-speed single-transistor dynamic random access memory (1T-DRAM) cells using a floating-body effect of an SOI substrate were demonstrated in the single-channel-recessed MFM cells. In order for the layer to avoid the interference of operations between NVM and 1T-DRAM modes, a dual read method using the capacitance coupling effect between a front-gate oxide layer and a back-gate oxide was examined. As a result, a large memory window of NVM operation was accomplished by using the back-gate read operation. Furthermore, the reliability of both NVM and 1T-DRAM operations was improved, and the interferences of operation mode between NVM and 1T-DRAM were effectively suppressed.
机译：研究了一种通道嵌入式多功能存储器（MFM）器件，并开发了一种利用电容耦合效应的双重读取方法。使用$ hbox {SiO} _ {2} hbox {/ Si} _ {3} hbox {N} _ {4} hbox {/ SiO} _ {2} $栅绝缘体和高电压的非易失性存储器（NVM）单元在单通道凹进MFM单元中证明了利用SOI衬底的浮体效应的高速单晶体管动态随机存取存储器（1T-DRAM）单元。为了避免该层干扰NVM和1T-DRAM模式之间的操作，研究了一种利用前栅极氧化物层和后栅极氧化物之间的电容耦合效应的双重读取方法。结果，通过使用后门读取操作完成了NVM操作的大内存窗口。此外，提高了NVM和1T-DRAM操作的可靠性，并有效抑制了NVM和1T-DRAM之间的操作模式干扰。

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