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首页> 外文期刊>Electron Device Letters, IEEE >Impact of Process-Induced Uniaxial Strain on the Temperature Dependence of Carrier Mobility in Nanoscale pMOSFETs
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Impact of Process-Induced Uniaxial Strain on the Temperature Dependence of Carrier Mobility in Nanoscale pMOSFETs

机译：工艺诱导的单轴应变对纳米级pMOSFET载流子迁移率温度依赖性的影响

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摘要

This letter provides an experimental assessment of temperature dependence of mobility for advanced short-channel strained devices. By accurate split C-V mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on the temperature dependence of mobility and mobility enhancement in nanoscale pMOSFETs. Our study indicates that the strain sensitivity of hole mobility becomes less with increasing temperature, and it is consistent with previous mechanical-bending result. Furthermore, the carrier-scattering mechanism for the pMOSFET under uniaxial compressive strain tends to be more phonon limited at a given vertical electric field, which explains the larger drain current sensitivity to temperature present in the compressively strained PFET.
机译：这封信为先进的短通道应变器件提供了对迁移率温度依赖性的实验评估。通过在不同温度下精确地分流C-V迁移率提取，我们研究了工艺诱导的单轴应变对纳米级pMOSFET迁移率和迁移率增强的温度依赖性的影响。我们的研究表明，空穴迁移率的应变敏感性随着温度的升高而变小，并且与先前的机械弯曲结果一致。此外，在给定的垂直电场下，单轴压缩应变下pMOSFET的载流子散射机制倾向于受到更多的声子限制，这解释了漏极电流对压缩应变PFET中存在的温度的灵敏度更高。

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