...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Electron Device Letters >High Transconductance of 2.25 S/mm Observed at 16 K for 195-nm-Gate In{sub}0.75Ga{sub}0.25As/In{sub}0.52Al{sub}0.48As HEMT Fabricated on (411)A-Oriented InP Substrate
【24h】

High Transconductance of 2.25 S/mm Observed at 16 K for 195-nm-Gate In{sub}0.75Ga{sub}0.25As/In{sub}0.52Al{sub}0.48As HEMT Fabricated on (411)A-Oriented InP Substrate

机译：在（411）A取向InP上制造的195 nm栅极In {sub} 0.75Ga {sub} 0.25As / In {sub} 0.52Al {sub} 0.48As HEMT，在16 K下观察到2.25 S / mm的高跨导基质

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We achieved a maximum transconduc-tance (g{sub}m) of 2.25 S/mm at 16 K for a 195-nm-gate In{sub}0.75Ga{sub}0.25As/In{sub}0.52Al{sub}0.48As pseudomorphic high-electron mobility transistor (PHEMT) fabricated on a (411)A-oriented InP substrate, which is the highest value ever reported for HEMTs. This PHEMT also showed a much enhanced cutoff frequency (f{sub}T) of 310 GHz at 16 K, compared with its room temperature value (245 GHz). The significantly enhanced g{sub}m and f{sub}T at 16 K can be attributed to the higher saturation velocity in the region "under the gate," which is caused not only by suppressing the phonon scattering, but also by suppressing the interface roughness scattering due to the "(411)A super-flat InGaAs/InAlAs interfaces" (effectively atomically flat heterointerfaces over a wafer-size area).
机译：对于195nm栅极In {sub} 0.75Ga {sub} 0.25As / In {sub} 0.52Al {sub}，我们在16 K下实现了2.25 S / mm的最大跨导（g {sub} m）在（411）A取向的InP衬底上制造的0.48As伪形高电子迁移率晶体管（PHEMT），是HEMT的最高值。与室温值（245 GHz）相比，此PHEMT在16 K下还显示出310 GHz的截止频率（f {sub} T）大大提高。在16 K时显着增强的g {sub} m和f {sub} T可以归因于“门下方”区域中较高的饱和速度，这不仅是由于抑制声子散射，而且还因为抑制了声子散射而引起的。由于“（411）A超平坦的InGaAs / InAlAs界面”（在晶圆尺寸区域上实际上是原子上平坦的异质界面）而导致界面粗糙度散射。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号