Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

Moon J.S.; Micovic M.; Kurdoghlian A.; Janke P.; Hashimoto P.; Wong W.-S.; McCray L.; Nguyen C.

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Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

机译：直流功耗小的AlGaN-GaN HEMT的微波噪声性能

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We report low microwave noise performance of discrete AlGaN-GaN HEMTs at DC power dissipation comparable to that of GaAs-based low-noise FETs. At 1-V source-drain (SD) bias and DC power dissipation of 97 mW/mm, minimum noise figures (NF/sub min/) of 0.75 dB at 10 GHz and 1.5 dB at 20 GHz were achieved, respectively. A device breakdown voltage of 40 V was observed. Both the low microwave noise performance at small DC power level and high breakdown voltage was obtained with a shorter SD spacing of 1.5 /spl mu/m in 0.15-/spl mu/m gate length GaN HEMTs. By comparison, NF/sub min/ with 2 /spl mu/m SD spacing was 0.2 dB greater at 10 GHz.

机译：我们报道了与基于GaAs的低噪声FET相比，离散AlGaN-GaN HEMT在直流功耗下的低微波噪声性能。在1-V源漏（SD）偏置和DC功耗为97 mW / mm的情况下，分别在10 GHz和0.75 GHz时分别获得0.75 dB和1.5 dB的最小噪声指数（NF / sub min /）。观察到40 V的器件击穿电压。在栅极长度为0.15- / splμ/ m的GaN HEMT中，SD间距为1.5 / splμ/μm时，在较小的DC功率水平下具有低的微波噪声性能和较高的击穿电压。相比之下，在10 GHz下，具有2 / spl mu / m SD间隔的NF / sub min /更大0.2 dB。

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来源
《IEEE Electron Device Letters》 |2002年第11期|p.637-639|共3页
作者
Moon J.S.; Micovic M.; Kurdoghlian A.; Janke P.; Hashimoto P.; Wong W.-S.; McCray L.; Nguyen C.;
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作者单位

HRL Labs. LLC, Malibu, CA, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
aluminium compounds; gallium compounds; wide band gap semiconductors; III-V semiconductors; microwave field effect transistors; high electron mobility transistors; semiconductor device noise; semiconductor device breakdown; microwave noise performanc;

机译：铝化合物镓化合物宽带隙半导体;III-V半导体;微波场效应晶体管;高电子迁移率晶体管;半导体器件噪声;半导体器件击穿;微波噪声性能;

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1. High Microwave and Noise Performance of 0.17-μm AlGaN-GaN HEMTs on High-Resistivity Silicon Substrates [J] . A. Minko, V. Hoel, S. Lepilliet, IEEE Electron Device Letters . 2004,第4期

机译：高电阻率硅衬底上0.17μmAlGaN-GaN HEMT的高微波和噪声性能
2. DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration [J] . Wu Lu, Kumar V., Piner E.L., IEEE Transactions on Electron Devices . 2003,第4期

机译：AlGaN-GaN场效应晶体管的直流，射频和微波噪声性能与铝浓度的关系
3. Hot-electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs [J] . A. Matulionis, J. Liberis, M. Ramonas, Physica Status Solidi. C, Conferences and critical reviews . 2005,第7期

机译：HEMT的AlGaN / AlN / GaN通道中的热电子微波噪声和功耗
4. AlGaN-GaN HEMTs and HBTs for microwave power [C] . Mishra, U.K., Ventury, . 2000

机译：用于微波功率的AlGaN-GaN HEMT和HBT
5. Gallium nitride-based HEMTs for microwave power and noise: Physics and application. [D] . Schwindt, Randal Scott. 2004

机译：用于微波功率和噪声的基于氮化镓的HEMT：物理和应用。
6. 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption Low-Noise Applications [O] . Cyrille Gardès, Sonia Bagumako, Ludovic Desplanque, -1

机译：用于超低功耗低噪声应用的100MTnm AlSb / InAs HEMT
7. DC, low frequency and RF drift in AlGaAs/InGaAs PM-HEMTs biased in high field and high power dissipation regime [O] . Meneghesso G., Paccagnella A., Martines G., 1998

机译：AlGaAs / InGaAs PM-HEMT中的直流，低频和RF漂移在高场和高功耗状态下存在偏差
8. Wideband Transferred-Substrate AlGaN-GaN Heterojunction Bipolar Transistors for Microwave Power Applications [R] . Mishra, U. K. , McCarthy, L. 2001

机译：用于微波功率应用的宽带转移衬底alGaN-GaN异质结双极晶体管

Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

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