AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

Chanh Nguyen; Takyiu Liu

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AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

机译：具有新型基极-集电极设计的AlInAs / GaInAs / InP双异质结双极晶体管，适用于电源应用

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We report the performance of an AlInAs/GaInAs/InP DHBT with a new collector design. The base-collector junction was formed with an all arsenide chirped superlattice with linear variation in the average composition. A doping dipole was inserted at the ends of the superlattice to cancel the quasielectric field. The conduction band offset between AlInAs and InP enabled hot electrons to be launched into the InP collector. The new design resulted in an excellent combination of speed and breakdown voltage with superior microwave power performance at X-band. Output power of 2 W (5.6 W/mm) with 70% power-added-efficiency at 9 GHz was achieved.

机译：我们报告了采用新收集器设计的AlInAs / GaInAs / InP DHBT的性能。基极-集电极结由全砷ar超晶格形成，其平均组成呈线性变化。在超晶格的末端插入了一个掺杂偶极子以抵消准电场。 AlInAs和InP之间的导带偏移使热电子能够发射到InP集电极中。新设计将速度和击穿电压与X波段出色的微波功率性能完美地结合在一起。在9 GHz时可获得2 W（5.6 W / mm）的输出功率和70％的功率附加效率。

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来源
《IEEE Electron Device Letters》 |1996年第3期|P.133-135|共3页
作者
Chanh Nguyen; Takyiu Liu;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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专利

1. Effects of collector doping on DC and RF performance of AlInAs/GaInAs/InP double heterojunction bipolar transistors [J] . Hafizi H., Liu T. IEEE Transactions on Electron Devices . 1993,第11期

机译：集电极掺杂对AlInAs / GaInAs / InP双异质结双极晶体管的DC和RF性能的影响
2. Reduction of the base-collector capacitance in InP/GaInAs heterojunction bipolar transistors due to electron velocity modulation [J] . Betser Y., Ritter D. IEEE Transactions on Electron Devices . 1999,第4期

机译：由于电子速度调制，InP / GaInAs异质结双极晶体管的基极-集电极电容减小
3. Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction [J] . Bolognesi C.R., Matine N. IEEE Electron Device Letters . 1999,第4期

机译：具有交错排列的基极-集电极结的无阻集电极InP / GaAs / sub 0.51 / Sb / sub 0.49 // InP双异质结双极晶体管
4. AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications [C] . Chanh Nguyen, Takyiu Liu Electron Devices Meeting, 1995., International . 1995

机译：具有新型基极-集电极设计的AlInAs / GaInAs / InP双异质结双极晶体管，适用于电源应用
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion [O] . A. Martí, A. Luque -1

机译：用于高效光伏转换的三端异质结双极晶体管太阳能电池
7. InGaAs/InP heterojunction bipolar transistors for ultra-low power circuit applications [O] . Chang, P.C., Baca, A.G., Hafich, M.J., 1998

机译：用于超低功耗电路应用的InGaas / Inp异质结双极晶体管
8. InP/GaAsSb/InP Double Heterojunction Bipolar Transistors. [R] . Bolgnesi, C. R., Dvorak, M. W., Watkins, S. P. 2002

机译：Inp / Gaassb / Inp双异质结双极晶体管。

AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

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