Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's

Pan Y.; Ng K.K.

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Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's

机译：LDD NMOSFET的热载流子感应电子迁移率和串联电阻退化

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The mobility and the series resistant degradation of LDD NMOSFET's were determined independently for the first time. Three device structures with different styles of drain engineering: 1) modestly doped LDD; 2) large-angle-tilt implanted drain, and 3) buried LDD were studied. We observed clearly that the series resistant drift dominates the initial device degradation and the relative importance of the mobility degradation increases as the stress time proceeds. Our work provides a useful guideline for device reliability optimization and for the development of the device degradation model for the circuit reliability simulation.

机译：首次独立确定了LDD NMOSFET的迁移率和串联电阻降级。三种具有不同漏极工程样式的器件结构：1）轻度掺杂LDD； 2）研究了大角度倾斜注入的漏极，以及3）埋入的LDD。我们清楚地观察到，串联电阻漂移主导了初始器件的退化，并且随着应力时间的延长，迁移率退化的相对重要性增加。我们的工作为器件可靠性优化和开发用于电路可靠性仿真的器件降级模型提供了有用的指导。

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《IEEE Electron Device Letters》 |1994年第12期|P.499-501|共3页
作者
Pan Y.; Ng K.K.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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1. Hot-carrier degradation for 90 nm gate length LDD- NMOSFET with ultra-thin gate oxide under low gate voltage stress [J] . Chen Hai-Rsng, Hao Yue, Ma Xiao-Hua, Chinese physics . 2007,第3期

机译：低栅极电压应力下具有超薄栅极氧化物的90 nm栅极长度LDD- NMOSFET的热载流子退化
2. Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress [J] . Chen Hai-Feng, Hao Yue, Ma Xiao-Hua, 中国物理：英文版 . 2007,第003期

机译：低栅极电压应力下具有超薄栅极氧化物的90 nm栅极长度LDD-NMOSFET的热载流子退化
3. Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique [J] . R.Dreesen, K.Crose, J.Manca Microelectronics & Reliability . 1999,第6a7期

机译：使用高分辨率测量技术对LDD NMOSFET的热载流子退化建模
4. Series resistance and effective channel mobility degradation in LDD nMOSFETs under hot-carrier stressing [C] . Oh, G.G., Chim, . 1999

机译：热载应力下LDD nMOSFET的串联电阻和有效沟道迁移率下降
5. Electron transport in bulk-Si NMOSFETs in presence of high-κ gate insulator: Charge trapping and mobility [D] . Maitra, Kingsuk 2005

机译：存在高κ栅极绝缘体的块状Si NMOSFET中的电子传输：电荷俘获和迁移率
6. III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation [O] . Ji-Hyun Hur, Sanghun Jeon -1

机译：用于量产纳米电子的III–V化合物半导体：位错迁移率降低的理论研究
7. Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection [O] . R. Marrakh, A. Bouhdada 2003

机译：LDD-nmOsFET的I-V特性建模与热载流子注入引起的缺陷有关
8. Reverse Gate Bias-Induced Degradation of AlGaN/GaN High Electron Mobility Transistors. [R] . Chang, C., Anderson, T., Hite, J., 2010

机译：反向栅极偏压诱导alGaN / GaN高电子迁移率晶体管的退化。

Hot-carrier induced electron mobility and series resistance degradation in LDD NMOSFET's

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