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首页> 外文期刊>IEEE Transactions on Electron Devices >Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results
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Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

机译：1.2 kV累积沟道和反向沟道4H-SiC MOSFET的四种电池拓扑的比较：分析和实验结果

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摘要

The electrical characteristics of 1.2-kV-rated 4H-SiC accumulation (Acc) and inversion (Inv) channel MOSFETs with linear, square, hexagonal, and octagonal cell topologies fabricated using the same design rules and process flow in a 6-in foundry are compared for the first time. TCAD numerical simulations have been conducted to analyze the structures. For all the cell topologies, it was found that the Acc MOSFETs have lower specific ON-resistance (R-ON,R- sp) than the Inv counterparts due to higher channel mobility resulting in 1.3-2.0x smaller high-frequency figure-of-merit (HF-FOM[R-ON x Q(gd)]), where Q(gd) is the gate-to-drain charge. It is observed that the square and hexagonal cell topologies with the same structural dimensions show similar electrical performance. When compared with the standard linear cell topology: 1) the hexagonal cell topology has 1.15x better specific ON-resistance and 1.12x worse HF-FOM[R-ON x Q(gd)] and 2) the octagonal cell topology has 1.5x worse specific ON-resistance and 1.4x better HF-FOM[R-ON x Q(gd)]. In addition, the octagonal cell topology has a much superior figure-of-merit (FOM[C-iss/C-rss]), where C-iss is the input capacitance and C-gd is the reverse transfer capacitance.
机译：在6英寸代工厂中使用相同的设计规则和工艺流程制造的线性，方形，六角形和八边形单元拓扑的1.2kV额定4H-SiC累积（Acc）和反向（Inv）沟道MOSFET的电特性为第一次比较。已经进行了TCAD数值模拟来分析结构。对于所有单元拓扑，发现由于较高的沟道迁移率，Acc MOSFET的比导通电阻（R-ON，R-sp）比Inv电阻低，这导致高频系数减小了1.3-2.0倍。 -优（HF-FOM [R-ON x Q（gd）]），其中Q（gd）是栅极到漏极的电荷。可以观察到具有相同结构尺寸的正方形和六边形电池拓扑显示出相似的电性能。与标准线性单元拓扑相比：1）六边形单元拓扑的导通电阻高1.15倍，HF-FOM [R-ON x Q（gd）]差1.12x； 2）八边形单元拓扑的1.5x比导通电阻更差，HF-FOM [R-ON x Q（gd）]提高1.4倍。此外，八边形单元拓扑具有优异的品质因数（FOM [C-iss / C-rss]），其中C-iss是输入电容，C-gd是反向传输电容。

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