High-Performance Split-Gate-Enhanced UMOSFET With Dual Channels

著录项

• 来源
  《Electron Devices, IEEE Transactions on》 |2017年第4期|1455-1460|共6页
• 作者

  Ying Wang; Cheng-Hao Yu; Meng-Shi Li; Fei Cao; Yan-Juan Liu;

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• 作者单位

  Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China;

  Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China;

  College of Information and communication Engineering, Harbin Engineering University, Harbin, China;

  Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China;

  College of Information and communication Engineering, Harbin Engineering University, Harbin, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Buffer layers; Doping; Ions; MOSFET; Semiconductor optical amplifiers; Split gate flash memory cells; Performance evaluation;

  机译：缓冲层;掺杂;离子;MOSFET;半导体光放大器;分离栅闪存单元;性能评估;