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首页> 外文期刊>IEEE Transactions on Electron Devices >THRU-Based Cascade De-embedding Technique for On-Wafer Characterization of RF CMOS Devices
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THRU-Based Cascade De-embedding Technique for On-Wafer Characterization of RF CMOS Devices

机译：基于THRU的级联去嵌入技术用于RF CMOS器件的晶圆上表征

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摘要

In this paper, an accurate two-port cascade-based de-embedding technique is presented for characterization of RF devices. It uses two and four structures for device structure with symmetrical and asymmetrical layouts, respectively. Specifically, it outperforms the existing de-embedding techniques by showing distinct capability of accounting for both series contact resistance and distributed effects of interconnects. Furthermore, it is designed to overcome the deficiency of existing transmission line-based techniques in dealing with the interconnects of nonuniform line width. To avoid over de-embedding errors in lumped techniques, the deembedding is performed in unique steps with solely THRU structures for better prediction of test fixture parasitic. The proposed technique is verified on THRU line for a wide frequency range from 2 to 50 GHz. It demonstrates better performance over existing transmission line-based technique as evidenced by excellent agreement with electromagnetic simulation result of THRU line. This is further confirmed by validation result on deembedded gain and gate capacitance of 0.13- $mu{rm m}$ nMOS devices.
机译：在本文中，提出了一种精确的基于两端口级联的去嵌入技术来表征射频器件。对于具有对称和不对称布局的器件结构，它分别使用两个和四个结构。具体而言，它通过显示出解决串联接触电阻和互连分布效应的独特能力，胜过了现有的去嵌入技术。此外，它被设计来克服现有的基于传输线的技术在处理不均匀线宽的互连中的不足。为避免集总技术中的过度解嵌错误，该解嵌仅使用THRU结构以独特的步骤执行，以更好地预测测试夹具的寄生效应。在THRU线路上针对2至50 GHz的宽频率范围验证了所提出的技术。它与现有的基于传输线的技术相比具有更好的性能，这与THRU线的电磁仿真结果非常吻合。这通过对0.13的nMOS器件的去嵌入增益和栅极电容的验证结果进一步得到证实。

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