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首页> 外文期刊>Electron Devices, IEEE Transactions on >Ameliorated Thermal Performance of n-p-n and p-n-p GaAs/InGaAs/InGaP Collector-Up HBTs
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Ameliorated Thermal Performance of n-p-n and p-n-p GaAs/InGaAs/InGaP Collector-Up HBTs

机译：n-p-n和p-n-p GaAs / InGaAs / InGaP集电极上HBT的改善的热性能

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摘要

To alleviate mutual heating, both n-p-n and p-n-p GaAs/InGaAs/InGaP collector-up heterojunction bipolar transistors with an effective heat-dissipation configuration (HDC), which can be used in power-amplifier circuits for next-generation wireless communication, have been successfully fabricated for the first time. Significantly different from recently proposed thermal-property-improving collector-up structures and thermal-via-hole designs, the HDC-implemented multifinger devices, with a graded InGaAs base but without the InGaP tunneling collector, are demonstrated to achieve compelling high-speed and heat-removing thermal performance. Preliminary results show that the thermal coupling has been substantially decreased, and nearly 20% amelioration, compared to previous work, in the temperature-rise ratio is obtained. Unprecedentedly, the HDC has a stronger influence on the p-n-p device than on the n-p-n device based on the empirical observations.
机译：为了减轻相互发热，具有有效散热配置（HDC）的npn和pnp GaAs / InGaAs / InGaP集电极向上异质结双极晶体管均已成功开发，可用于下一代无线通信的功率放大器电路中第一次制造。与最近提出的改善热性能的集电极结构和热通孔设计显着不同，采用HDC实现的多指器件具有渐变的InGaAs基体，但没有InGaP隧穿集电极，被证明能够实现引人注目的高速和高效率。排热性能。初步结果表明，与以前的工作相比，在温升比方面，热耦合已大大减少，并且改善了近20％。根据经验观察，与以往相比，HDC对p-n-p器件的影响要强于对n-p-n器件的影响。

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