...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Electron Devices, IEEE Transactions on >Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications
【24h】

Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications

机译：用于光伏应用的变质GaAsP / Si材料和器件的表征

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

$hbox{GaAs}_{y}hbox{P}_{1 - y}$ anion-sublattice compositionally graded buffers and device structures were grown directly on Si(100) substrates by way of a high-quality GaP integration layer, yielding GaAsP target layers having band gaps of photovoltaic interest (1.65–1.8 eV), free of antiphase domains/borders, stacking faults, and microtwins. $hbox{GaAs}_{y}hbox{P}_{1 - y}$ growths on both Si and GaP substrates were compared via high-resolution X-ray diffractometry of the metamorphic buffers and deep-level transient spectroscopy (DLTS) of $hbox{p}^{+}-hbox{n}$ diodes that are lattice matched to the final buffer layer. Structural analysis indicates highly efficient epitaxial relaxation throughout the entire growth structure for both types of samples and suggests no significant difference in physical behavior between the two types of samples. DLTS measurements performed on GaAsP diodes fabricated on both Si and GaP substrates reveal the existence of identical sets of traps residing in the n-type GaAsP layers in both types of samples: a single majority carrier (electron) trap, which is located at $E_{C} - hbox{0.18} hbox{eV}$, and a single minority carrier (hole) trap, which is located at $E_{V} + hbox{0.71} hbox{eV}$. Prototype 1.75-eV GaAsP solar cell test devices grown on $hbox{GaAs}_{y}hbox{P}_{1 - y}/hbox{Si}$ buffers show good preliminary performance characteristics and offer great promise for future high-efficiency III–V photovoltaics integrated with Si substrates and devices.
机译：$ hbox {GaAs} _ {y} hbox {P} _ {1-y} $阴离子-亚晶格组成分级的缓冲液和器件结构通过高质量GaP集成层直接在Si（100）衬底上生长，从而产生GaAsP目标层具有光伏感兴趣的带隙（1.65–1.8 eV），没有反相域/边界，堆叠缺陷和微孪晶。通过变质缓冲液的高分辨率X射线衍射法和深层瞬态光谱法（DLTS）比较了Si和GaP衬底上$ hbox {GaAs} _ {y} hbox {P} _ {1- y} $的生长与最终缓冲层晶格匹配的$ hbox {p} ^ {+}-hbox {n} $个二极管。结构分析表明，对于两种类型的样品，在整个生长结构中均具有高效的外延松弛，并且表明两种类型的样品之间的物理行为无明显差异。在Si和GaP衬底上制造的GaAsP二极管上进行的DLTS测量表明，在两种类型的样品中，n型GaAsP层中都存在相同的陷阱集：单多数载流子（电子）陷阱，位于$ E_ {C}-hbox {0.18} hbox {eV} $，以及一个位于$ E_ {V} + hbox {0.71} hbox {eV} $的单个少数载波（空穴）陷阱。在$ hbox {GaAs} _ {y} hbox {P} _ {1-y} / hbox {Si} $缓冲器上生长的原型1.75-eV GaAsP太阳能电池测试设备显示出良好的初步性能特征，并为未来的高容量测试提供了广阔的前景。具有Si衬底和器件的高效III-V光伏产品。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号