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首页> 外文期刊>IEEE Transactions on Electron Devices >At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity
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At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity

机译：AlGaN / GaN HEMT中访问寄生电阻的全貌提取：对器件线性度和沟道电子速度的影响

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摘要

AlGaN/GaN high-electron mobility transistor "hot" parasitic source and drain resistances RS,D are determined under operating biases through wideband S-parameter measurements, without the use of "ColdFET" biasing conditions. Both RS and RD are found to increase dramatically over ColdFET values, both for biases approaching threshold and for open-channel conditions. Parasitic resistance values have a significant effect on the extracted small-signal equivalent circuit model elements, as well as on the apparent device linearity. The bias dependence of access resistances modifies the understanding of the transistor physical operation: A revised delay time analysis accounting for the bias dependence of parasitic resistances shows that the effective average electron velocity in the AlGaN/GaN two-dimensional electron-gas channel is approximately equal to 1.9 times 107 cm/s. This new value of channel velocity is also consistent with the CGS/gMO ratio obtained when the bias dependence of RS and RD is accounted for during the extraction of the transistor small-signal equivalent circuit model
机译：在不使用“ ColdFET”偏置条件的情况下，通过宽带S参数测量在工作偏置下确定了AlGaN / GaN高电子迁移率晶体管“热”寄生源极和漏极电阻RS，D。发现RS和RD都比ColdFET值显着增加，无论是偏置电压接近阈值还是开路条件。寄生电阻值对提取的小信号等效电路模型元素以及表观器件线性度都有重要影响。访问电阻的偏置依存关系会改变对晶体管物理操作的理解：修正后的延迟时间分析考虑了寄生电阻的偏置依存关系，表明AlGaN / GaN二维电子气通道中的有效平均电子速度近似相等至107厘米/秒的1.9倍。当在晶体管小信号等效电路模型的提取过程中考虑了RS和RD的偏置依赖性时，该通道速度的新值也与CGS / gMO比一致。

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