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首页> 外文期刊>IEEE Transactions on Electron Devices >A 10-s doping technology for the application of low-temperature polysilicon TFTs to giant microelectronics
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A 10-s doping technology for the application of low-temperature polysilicon TFTs to giant microelectronics

机译：将低温多晶硅TFT应用于巨型微电子的10 s掺杂技术

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摘要

A bucket-type high-density (0.25-1.2-mA/cm/sup 2/) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO/sub 2/. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm*8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics.
机译：利用桶型高密度（0.25-1.2-mA / cm / sup 2 /）低能（500-2000 V）离子源将磷直接高速掺杂到薄的多晶硅层中，而无需覆盖SiO / sub 2 /。选择用氦气稀释的掺杂气体以减少多晶硅膜的蚀刻。引入准分子激光（XeCl，8 mm * 8 mm）脉冲退火以有效激活掺杂杂质。这些技术的结合为TFT源极，漏极和栅极提供了极低的薄层电阻，并且掺杂时间很短。掺杂时间为10 s的低温多晶硅TFT具有与较长时间掺杂或常规离子注入所制造的低温多晶硅TFT相当的特性，显示了该技术的实用性及其对巨型微电子技术的希望。

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