Mechanisms for hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under combined AC/DC stressing

Ma Z.-J.; Lai P.T.

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Mechanisms for hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under combined AC/DC stressing

机译：AC / DC组合应力作用下热载流子引起的再氧化氮氧化物n-MOSFET退化的机理

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Hot-carrier-induced degradation behavior of reoxidized-nitrided-oxide (RNO) n-MOSFETs under combined AC/DC stressing was extensively studied and compared with conventional-oxide (OX) MOSFETs. A degradation mechanism is proposed in which trapped holes in stressed gate oxide are neutralized by an ensuing hot-electron injection, leaving lots of neutral electron traps in the gate oxide, with no significant generation of interface states. The degradation behavior of threshold voltage, subthreshold gate-voltage swing, and charge-pumping current during a series of AC/DC stressing supports this proposed mechanism. RNO device degradation during AC stressing arises mainly from the charge trapping in gate oxide rather than the generation of interface states due to the hardening of the Si-SiO/sub 2/ interface by nitridation/reoxidation steps.

机译：广泛研究了在复合交流/直流应力下热载流子引起的再氧化氮氧化物（RNO）n-MOSFET的退化行为，并将其与常规氧化物（OX）MOSFET进行了比较。提出了一种降解机理，其中通过随后的热电子注入来中和应力栅氧化层中的陷阱空穴，从而在栅氧化层中留下许多中性电子陷阱，而不会显着产生界面态。在一系列AC / DC应力过程中，阈值电压，亚阈值栅极电压摆幅和电荷泵电流的退化行为支持了该机制。 AC应力期间RNO器件的劣化主要是由于栅氧化层中的电荷俘获引起的，而不是由于氮化/再氧化步骤使Si-SiO / sub 2 /界面硬化而导致的界面态的产生。

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《IEEE Transactions on Electron Devices》 |1993年第6期|P.1112-1120|共9页
作者
Ma Z.-J.; Lai P.T.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFETs under mixed AC-DC stressing [J] . Ma Z.J., Lai P.T. IEEE Electron Device Letters . 1992,第6期

机译：混合AC-DC应力下热载流子引起的再氧化氮氧化物n-MOSFET的退化
2. AC/DC characterization of NMOS and PMOS hot-carrier-induced degradation under AC/DC stress [J] . Dawes M., Alavi M. IEEE Transactions on Electron Devices . 1990,第11期

机译：AC / DC应力下NMOS和PMOS热载流子引起的退化的AC / DC特性
3. Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing [J] . Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Microelectronics & Reliability . 2013,第12期

机译：在直流和交流应力下具有HfSiON栅极电介质的n-MOSFET中随时间变化的介电击穿（TDDB）分布
4. Hot-carrier-induced MOSFET degradation: AC versus DC stressing [C] . J. Y. Choi, P. K. Ko, C. Hu Symposium on VLSI Technology . 1987

机译：热载流子引起的MOSFET退化：交流与直流应力
5. Parallel resonant DC link circuit: A novel zero voltage switching topology with minimum voltage stress for DC-AC power conversion [D] . He, Jin 1990

机译：并联谐振直流环节电路：一种新颖的零电压开关拓扑结构，具有最小的电压应力，可用于DC-AC电源转换
6. Combining DC and AC electric fields with deterministic lateral displacement for micro- and nano-particle separation [O] . Victor Calero, Pablo Garcia-Sanchez, Antonio Ramos, 2019

机译：结合DC和AC电场具有确定性横向位移的微粒和纳米粒子分离
7. Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing [O] . Hirano Izumi, Nakasaki Yasushi, Fukatsu Shigeto, 2013

机译：在直流和交流应力下具有HfSiON栅极电介质的n-MOSFET中随时间变化的介电击穿（TDDB）分布
8. Characterizing the Degradation of Army Primers by the AC-DC-AC Accelerated Test Method [R] . Upadhyay, V., Allahar, K. N., Bierwagen, G. P. 2010

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Mechanisms for hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under combined AC/DC stressing

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