Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs

著录项

• 来源
  《Electron Devices Society, IEE》 |2016年第6期|396-401|共6页
• 作者

  Mohit D. Ganeriwala; Chandan Yadav; Nihar R. Mohapatra; Sourabh Khandelwal; Chenming Hu; Yogesh Singh Chauhan;

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• 作者单位

  Department of Electrical Engineering, Indian Institute of Technology Gandhinagar, Gandhinagar, India;

  Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India;

  Department of Electrical Engineering, Indian Institute of Technology Gandhinagar, Gandhinagar, India;

  Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, USA;

  Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, USA;

  Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Quantum capacitance; SPICE; Numerical models; Computational modeling; Semiconductor device modeling; III-V semiconductor materials; FinFETs;

  机译：量子电容;SPICE;数值模型;计算模型;半导体器件模型;III-V族半导体材料;FinFET;