> 700 W continuous-wave output power from single laser diode bar

H.X. Li; I. Chyr; X. Jin; F. Reinhardt; T. Towe; D. Brown; T. Nguyen; M. Berube; T. Truchan; D. Hu; R. Miller; R. Srinivasan; T. Crum; E. Wolak; R. Bullock; J. Mott; J. Harrison

首页> 外文期刊>Electronics Letters >> 700 W continuous-wave output power from single laser diode bar

【24h】

> 700 W continuous-wave output power from single laser diode bar

机译：来自单个激光二极管棒的> 700 W连续波输出功率

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

> 700 W continuous-wave output power has been demonstrated from a single 1 cm-wide laser bar ( ～ 940 nm) with 77% fill factor. Maximum power conversion efficiency (PCE) of 65% has been achieved. Facet power density of 170mW/μm and maximum PCE of 69% have been measured for 10% fill-factor bars with 3 mm cavity length.

机译：单个1 cm宽的激光棒（〜940 nm）具有77％的填充系数，证明了> 700 W的连续波输出功率。已实现65％的最大功率转换效率（PCE）。对于腔长为3 mm的10％填充系数棒，已测量出170mW /μm的刻面功率密度和69％的最大PCE。

著录项

来源
《Electronics Letters》 |2007年第1期|p.27-29|共3页
作者
H.X. Li; I. Chyr; X. Jin; F. Reinhardt; T. Towe; D. Brown; T. Nguyen; M. Berube; T. Truchan; D. Hu; R. Miller; R. Srinivasan; T. Crum; E. Wolak; R. Bullock; J. Mott; J. Harrison;
展开▼
作者单位

Spectra-Physics Lasers, A Division of Newport Corp., 3321 E. Global Loop, Tucson, Arizona 85706, USA;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Output beam characteristics of high-power continuous-wave diode laser bars [J] . Nicolas G. Muller, Rudolf Weber, Heinz P. Weber Optical engineering . 1995,第8期

机译：大功率连续波二极管激光棒的输出光束特性
2. Single spatial mode 3 ;C;m diode lasers with continuous-wave output power of 15 mW at room temperature [J] . Hosoda T., Kipshidze G., Shterengas L., Electronics Letters . 2011,第24期

机译：室温下连续波输出功率为15 mW的单空间模式3; C; m二极管激光器
3. Near 1 kW of Continuous-Wave Power From a Single High-Efficiency Diode-Laser Bar [J] . Li H., Towe T., Chyr I., IEEE Photonics Technology Letters . 2007,第13期

机译：单个高效二极管激光棒可提供近1 kW的连续波功率
4. Developments of high-power 9xx-nm single emitter laser diodes and laser diode bars [C] . Morita Takenori, Kageyama Nobuto, Torii Kousuke, IEEE Photonics Society Summer Topical Meeting Series . 2012

机译：大功率9xx-nm单发射器激光二极管和激光二极管条的发展
5. ovel InP Based High-Power and High-Efficiency, Single Quantum Well (SQW) Active Region Diode Laser, Emitting at 1.5 microm. [D] . Garrod, Toby J. 2015

机译：ovel基于InP的高功率，高效率，单量子阱（SQW）有源区二极管激光器，发射功率为1.5微米。
6. Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells [O] . Wenjie Wang, Wuze Xie, Zejia Deng, 2019

机译：使用非对称In0.15Ga0.85N / In0.02Ga0.98N多量子阱提高InGaN激光二极管的输出功率
7. Formation of single-crystal Cu2O strips in non-single-crystal CuO thin films by continuous-wave laser diode with micro-chevron laser beam ($$mu$$-CLB) [O] . Brian Giraldo, Wenchang Yeh, Nobuhiko P. Kobayashi 2020

机译：通过连续波激光二极管形成单晶CuO薄膜中的单晶Cu2O条带，与微脚轮激光束（$$ mu $$ - CLB）
8. Output Power and Temperature Dependence of the Linewidth of Single-Frequency cw(GaAl)As Diode Lasers [R] . Welford, D., Mooradian, A. 1982

机译：单频线圈（Gaal）作为二极管激光器线宽的输出功率和温度依赖性

> 700 W continuous-wave output power from single laser diode bar

摘要

著录项

相似文献

相关主题

期刊订阅