High performance uncooled C-band, 10 Gbit/s InGaAIAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules

N.C. Frateschi; J. Zhang; W.J. Choi; H. Gebretsadik; R. Jambunathan; A.E. Bond

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High performance uncooled C-band, 10 Gbit/s InGaAIAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules

机译：高性能非冷却C波段，10 Gbit / s InGaAIAs MQW电吸收调制器，已集成到激光集成模块中的半导体放大器中

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摘要

Long reach C-band 10 Gbit/s uncooled operation of laser integrated to InGaAIAs electroabsorption modulator packages is presented. Using a design employing InGaAlsAs multi-quantum wells (MQW), uncooled operation over an 80℃ temperature range, with modulated output power in excess of 0 dBm, 1.7 dB maximum change in extinction ratio, and with a dispersion penalty of 1 dB for 1600 psm propagation is demonstrated.

机译：介绍了集成到InGaAIAs电吸收调制器封装中的激光器的远距离C波段10 Gbit / s非冷却操作。使用采用InGaAlsAs多量子阱（MQW）的设计，在80℃温度范围内进行非制冷操作，调制输出功率超过0 dBm，消光比最大变化1.7 dB，1600的色散损失为1 dB演示了ps / nm传播。

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来源
《Electronics Letters》 |2004年第2期|p.140-141|共2页
作者
N.C. Frateschi; J. Zhang; W.J. Choi; H. Gebretsadik; R. Jambunathan; A.E. Bond;
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T-Networks, Inc., 6580 Snowdrift Road, Suite 100, Allentown, PA 18106, USA;

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正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Uncooled Performance of 10-Gb/s Laser Modules With InGaAlAs-InP and InGaAsP-InP MQW Electroabsorption Modulators Integrated With Semiconductor Amplifiers [J] . N. C. Frateschi, J. Zhang, R. Jambunathan, IEEE Photonics Technology Letters . 2005,第7期

机译：集成了InGaAlAs-InP和InGaAsP-InP MQW电吸收调制器且集成了半导体放大器的10 Gb / s激光模块的非制冷性能
2. 25 Gbit/s 1.3 μm InGaAIAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system [J] . T. Fujisawa, M. Arai, N. Fujiwara, Electronicsletters . 2009,第17期

机译：25 GHz / s 1.3μm基于InGaAIAs的电吸收调制器与DFB激光器集成在一起，用于城域（40 km）100 Gbit / s以太网系统
3. Uncooled Operation of 10-/40-Gbit/s 1.55-μm Electroabsorption Modulator Integrated with Distributed Feedback Laser [J] . Wataru Kobayashi, Naoki Fujiwara, Takashi Tadokoro, NTT Technical Review . 2010,第8期

机译：集成了分布式反馈激光器的10- / 40-Gbit / s1.55-μm电吸收调制器的非制冷运行
4. 40 Gbit/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum wells [C] . Gerlach P., Peschke M., Saravanan B.K., Indium Phosphide and Related Materials, 2005. International Conference on . 2005

机译：使用相同的InGaAlAs量子阱的激光集成电吸收调制器的40 Gbit / s操作
5. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters [O] . Hou LP, Zhu HL, Zhou F, 2006

机译：与点尺寸转换器单片集成的电吸收调制半导体光放大器

High performance uncooled C-band, 10 Gbit/s InGaAIAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules

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