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首页> 外文期刊>Emerging and Selected Topics in Power Electronics, IEEE Journal of >Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs
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Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs

机译：用于大电流大晶粒IGBT的新型压力触点封装的建模和分析

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摘要

megawatt-class power converters need insulated gate bipolar transistors (IGBTs) with kiloampere current ratings. Conventional IGBT power modules face difficulty to meet the reliability and over-current requirements due to bond wires, solder joint, and single-side cooling limitations. Press-pack IGBTs overcome these drawbacks, but demands extremely tight tolerance control in chip screening and matching, module parts manufacturing, and assembly. In this paper, a new pressure contact package for high-current large-die IGBTs is proposed, modeled, and experimentally studied to allow a simpler packaging process. A large IGBT die, many times the size of a typical IGBT die, is designed with a unique layout of multiple segmented emitter pads and a common gate pad. A patterned polymer positioning frame is placed onto the die. Metal contact spacers are placed in the openings of the frame to connect the emitter lid to the IGBT emitter sectors. A collector contact disc is placed between the IGBT die and the collector lid. Finite-element (FE) analysis is conducted to evaluate the mechanical and thermal performance of the new package. A 3300-V, 14-cm(2) active area, round-shape IGBT die is fabricated and packaged. Excellent electrical and thermal characteristics are demonstrated to validate the feasibility of the IGBT and package concept.
机译：兆瓦级功率转换器需要额定电流为千安的绝缘栅双极晶体管（IGBT）。由于键合线，焊点和单侧冷却限制，传统的IGBT电源模块难以满足可靠性和过电流要求。压装式IGBT克服了这些缺点，但需要在芯片筛选和匹配，模块零件制造和组装中严格控制公差。本文提出，建模和实验研究了一种用于大电流大晶粒IGBT的新型压力接触封装，以简化封装过程。大型IGBT裸片的尺寸是典型IGBT裸片的许多倍，其设计具有多个分段发射极焊盘和一个公共栅极焊盘的独特布局。将图案化的聚合物定位框架放置在模具上。金属接触垫片放置在框架的开口中，以将发射极盖连接到IGBT发射极扇区。集电极接触盘放置在IGBT裸片和集电极盖之间。进行了有限元（FE）分析，以评估新封装的机械性能和热性能。制造并封装了3300V，14cm（2）有源区域的圆形IGBT裸片。出色的电气和热特性证明了IGBT和封装概念的可行性。

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