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首页> 外文期刊>Energy Conversion & Management >Thermoelectric performance of Si_(80)Ge_(20-x)Sb_x based multiphase alloys with inhomogeneous dopant distribution
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Thermoelectric performance of Si_(80)Ge_(20-x)Sb_x based multiphase alloys with inhomogeneous dopant distribution

机译：具有不均匀掺杂分布的Si_（80）Ge_（20-x）Sb_x基多相合金的热电性能

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摘要

Si_(80)Ge_(20-x)Sb_x based alloys were synthesized employing high energy ball milling and induction hot pressing with change in milling time and Sb content. With increasing milling time, the grain size decreases and the elements become more evenly distributed for both the as-milled powder and the hot pressed samples. Microstructure analysis on the hot pressed samples revealed presence of nano-features of 10-200 nm and existence of multiphases, including Si-rich matrix, Ge-rich phase and Si-Ge-Sb ternary precipitates. Moreover, for the dry-milled samples the intended doping element, Sb, prefers to locate in the Ge-rich phase or in the Si-Ge-Sb ternary area rather than in the Si-rich matrix. Sb doping leads to n-type conduction, but Sb content has little influence on the carrier concentration. The milling time has double effects on the thermoelectric properties. On the one hand, the inhomogeneous dopant distribution in the samples prepared by shorter milling time leads to higher carrier mobility and higher power factor due to modulation doping effect. But on the other hand, the thermal conductivity decreases with increasing milling time due to enhanced boundary scattering of middle-to-long term phonons at the nano-to-micro sized boundaries and impurity interfaces. As a result, the 2 h dry-milled and hot pressed sample obtains the maximum power factor of 2.5 × 10~(-3) Wm~(-1) K~(-2) at 780 K, the more homogeneous samples prepared by 16 h of dry-milling or wet-milling exhibit the lowest power factor and lowest ZT, while the 6 h dry-milled and hot pressed sample with nominal composition Si_(80)Ge_(18)Sb_2 possesses the maximum ZT value of 0.67 at 1000 K.
机译：利用高能球磨和感应热压随着铣削时间和Sb含量的变化，合成了Si_（80）Ge_（20-x）Sb_x基合金。随着研磨时间的增加，晶粒尺寸减小，并且元素对于研磨后的粉末和热压样品均变得更均匀。对热压样品的微观结构分析表明，存在10-200 nm的纳米特征，并且存在多相，包括富Si基质，富Ge相和Si-Ge-Sb三元沉淀。此外，对于干磨样品，预期的掺杂元素Sb倾向于位于富Ge相或Si-Ge-Sb三元区域中，而不是位于富Si基质中。 Sb掺杂导致n型传导，但Sb含量对载流子浓度影响很小。研磨时间对热电性质具有双重影响。一方面，由于调制掺杂效应，通过更短的研磨时间制备的样品中不均匀的掺杂剂分布导致更高的载流子迁移率和更高的功率因数。但是，另一方面，由于中至长期声子在纳米至微米级边界和杂质界面处的边界散射增强，导热系数随研磨时间的增加而降低。结果，经过2 h干磨和热压的样品在780 K时获得的最大功率因数为2.5×10〜（-3）Wm〜（-1）K〜（-2），通过干磨或湿磨16 h表现出最低的功率因数和最低的ZT，而标称成分为Si_（80）Ge_（18）Sb_2的干磨和热压样品6 h的最大ZT值为0.67。 1000K。

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  • 来源
    《Energy Conversion & Management》 |2015年第4期|331-336|共6页
  • 作者

    Chunlin Wang; Shanshan Lin; Haiyan Chen; Yan Zhao; Ling Zhao; Huili Wang; Dexuan Huo; Xiaoyuan Chen;

  • 作者单位

    Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China,University of Chinese Academy of Sciences, China;

    Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China,Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, China;

    Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;

    Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China,Department of Materials Science, Fudan University, Shanghai 200433, China;

    Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;

    Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;

    Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou 310018, China;

    Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    SiGe alloy; Sb doping; Thermoelectric properties; Multiphase; Inhomogeneous dopant distribution;

    机译：硅锗合金;锑掺杂;热电性能;多相掺杂剂分布不均匀;

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