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ZnO cathode buffer layers for inverted polymer solar cells

机译:用于倒置聚合物太阳能电池的ZnO阴极缓冲层

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摘要

This article provides an overview of the design, fabrication and characterization of the most widely used cathode buffer layers (CBLs) constructed using pristine zinc oxide (ZnO), doped-ZnO, and ZnO-based composites as well as the surface modified ZnO-based CBLs for the improvement of power conversion efficiency (PCE) and long-term device stability of inverted polymer solar cells (PSCs). To achieve high PCE in inverted PSCs, the selection of an appropriate material to form high quality CBLs so as to optimize the electron collection and transport is particularly important. ZnO has been the most extensively studied material for CBL of inverted PSCs in view of its relatively high electron mobility, optical transparency, ease of being synthesized with low cost solution methods at low temperature, versatile morphologies, and being environmentally stable. It is pointed out in this review that the electronic processes at the interface between the ZnO CBL and polymer active layer play an important role in determining the solar cells performance. This review attempts to deliver better understanding with regard of the impacts of (1) morphology, (2) thickness, (3) nanostructures, (4) doping, (5) surface modification and (6) composition/hybrids of ZnO CBLs on the inverted PSCs performance. Well understanding the interfacial processes in PSCs is believed also a benefit to the emerging perovskite solar cells in view of their similar energy levels and device structures.
机译:本文概述了使用原始氧化锌(ZnO),掺杂的ZnO和ZnO基复合材料以及表面改性的ZnO基构建的最广泛使用的阴极缓冲层(CBL)的设计,制造和特性。用于改善功率转换效率(PCE)和反向聚合物太阳能电池(PSC)的长期设备稳定性的CBL。为了在反向PSC中获得较高的PCE,选择合适的材料以形成高质量的CBL,以优化电子的收集和传输尤为重要。鉴于ZnO相对较高的电子迁移率,光学透明性,易于在低温下用低成本溶液法合成,通用的形态以及环境稳定等优点,因此它已成为对反向PSC的CBL进行最广泛研究的材料。在这篇评论中指出,ZnO CBL和聚合物活性层之间的界面处的电子过程在决定太阳能电池性能方面起着重要作用。本文旨在就(1)形态,(2)厚度,(3)纳米结构,(4)掺杂,(5)表面改性和(6)ZnO CBLs的组成/杂化物的影响提供更好的理解。倒置的PSC性能。鉴于对钙钛矿型太阳能电池相似的能级和器件结构,因此对它们的界面过程有充分的了解也对新兴的钙钛矿型太阳能电池有利。

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  • 来源
    《Energy & environmental science》 |2015年第12期|3442-3476|共35页
  • 作者单位

    Soochow Univ, Inst Funct Nano & Soft Mat Lab FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Jiangsu, Peoples R China|Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA;

    Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA;

    Soochow Univ, Inst Funct Nano & Soft Mat Lab FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Jiangsu, Peoples R China;

    Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA;

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