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首页> 外文期刊>IEE Proceedings. Part B >New generation 1200 V power module with trench gate IGBT and super soft recovery diode and its evaluations
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New generation 1200 V power module with trench gate IGBT and super soft recovery diode and its evaluations

机译：带有沟槽栅IGBT和超软恢复二极管的新一代1200 V电源模块及其评估

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摘要

A 1200 V IGBT with trench gate and punch through structures is developed on the basis of simulation and experimental analyses. Both results of simulation and measurement of the prototype device have good agreement. Though the chip area of the new IGBT is about 30-50% smaller than that of the conventional IGBT, the saturation voltage is about 30-40% lower, the switching loss is also about 20%, smaller than those of conventional IGBT, respectively, and the new IGBT has a larger reverse bias safe operating area (RBSOA). Capability to withstand short circuits is achieved by a new current limiting circuit. In addition, a fast switching diode with an excellent soft recovery characteristic is practically developed by using local lifetime control processing in the anode side n-layer. As an experimental result, its power dissipation, spike surge voltage and electromagnetic noise can be lowered. The structures and characteristics of the developed IGBT, diode and power module are presented, and their analytical results are discussed and evaluated from a practical and an applications point of view.
机译：在仿真和实验分析的基础上，开发了具有沟槽栅和穿通结构的1200 V IGBT。原型设备的仿真和测量结果都具有良好的一致性。尽管新型IGBT的芯片面积比常规IGBT的芯片面积小约30-50％，但饱和电压却低了约30-40％，开关损耗也分别比常规IGBT的芯片面积小约20％。 ，新型IGBT具有更大的反向偏置安全工作区（RBSOA）。新型短路限制电路可实现承受短路的能力。另外，通过在阳极侧n层中使用局部寿命控制处理，实际上开发了具有优异的软恢复特性的快速开关二极管。作为实验结果，可以降低其功耗，尖峰浪涌电压和电磁噪声。介绍了所开发的IGBT，二极管和功率模块的结构和特性，并从实际和应用的角度对它们的分析结果进行了讨论和评估。

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