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首页> 外文期刊>IEE Proceedings. Part J >Optimising 1550 nm InGaAsP strain compensated MQW lasers close to the miscibility gap
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Optimising 1550 nm InGaAsP strain compensated MQW lasers close to the miscibility gap

机译：优化1550 nm InGaAsP应变补偿的MQW激光器，接近混溶间隙

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摘要

Fabry Perot 1550 nm sources are required for a number of high volume short haul applications, and an optimised device design is sought which is suitable for wide temperature range operation. Strain compensated multiquantum well lasers with between five and 11 wells were produced using MOCVD with /spl sim/1%, compressive strain in the wells, and /spl sim/1% tensile strain in the barriers. Electrical, optical, X-ray and TEM studies were used to determine the material properties. Although RT-PL measurements indicated good material quality for all wafers, significant degradation in device properties was observed for larger well numbers. TEM studies are presented which show the degradation to be due to the onset of "wavy layer" growth, which is also responsible for a broadening of the satellite peaks in the X-ray rocking curves for the material. Although wavy layer effects constrain the matrix, high quality devices were produced with low thresholds, high output powers, and wide temperature range operation.
机译：Fabry Perot 1550 nm光源是许多大批量短程应用所必需的，寻求一种适合宽温度范围操作的优化器件设计。使用MOCVD生产具有5到11个孔的应变补偿多量子阱激光器，其中/ spl sim / 1％，孔中的压缩应变，以及势垒中的/ spl sim / 1％拉伸应变。电学，光学，X射线和TEM研究用于确定材料性能。尽管RT-PL测量表明所有晶片均具有良好的材料质量，但对于较大的孔数，观察到器件性能显着下降。提出了TEM研究，其表明降解是由于“波浪层”生长的开始，这也导致材料的X射线摇摆曲线中的卫星峰变宽。尽管波浪层效应限制了基体，但仍生产出了具有低阈值，高输出功率和宽温度范围操作的高质量器件。

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