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首页> 外文期刊>IEE Proceedings. Part J >Optically controlled characteristics of an ion-implanted hetero-MIS capacitor
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Optically controlled characteristics of an ion-implanted hetero-MIS capacitor

机译：离子注入异质MIS电容器的光控特性

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The paper introduces an InGaAs/InP:Fe hetero-MIS structure which can be used as an optically controlled capacitor. A numerical model of the device has been developed to investigate the effect of illumination on the characteristics of the device. To generalise the model, the semiconductor has been assumed to be nonuniformly doped. The model takes into account the effects of the surface states and change in time constant of the minority carriers (electrons in this case) due to illumination. It has been found that the capacitance of the proposed structure can be precisely controlled by the incident optical power. The capacitor is expected to find useful applications in solid-state imaging and optical tuning. The model developed here can be used as a basic tool for analysing similar hetero-MIS structures with arbitrary doping profiles.
机译：本文介绍了一种InGaAs / InP：Fe异质MIS结构，可用作光控电容器。已经开发出设备的数值模型以研究照明对设备特性的影响。为了概括该模型，已假定半导体是非均匀掺杂的。该模型考虑了表面状态的影响以及少数载流子（在这种情况下为电子）由于光照引起的时间常数变化。已经发现，所提出的结构的电容可以由入射光功率精确地控制。该电容器有望在固态成像和光学调谐中找到有用的应用。此处开发的模型可以用作分析具有任意掺杂轮廓的相似异型MIS结构的基本工具。

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