Design and fabrication of packaged InP/InGaAsP multiple quantum well waveguide components with very low insertion loss

Lynch T.G.; MacBean M.D.A.

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Design and fabrication of packaged InP/InGaAsP multiple quantum well waveguide components with very low insertion loss

机译：具有极低插入损耗的封装式InP / InGaAsP多量子阱波导组件的设计与制造

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The design of a multiple quantum well (MQW) waveguide with low fibre-to-fibre loss, suitable for optoelectronic device integration, is described. The devices were grown by atmospheric pressure MOVPE and designed to be matched to standard, lensed optical fibre. Measured propagation loss was (0.75+or-0.1) dB cm/sup -1/ with a fibre-to-fibre loss of (2.6+or-0.1) dB. Analysis shows that the coupling loss due to mode mismatch was less than (0.52+or-0.14) dB/facet, believed to be the lowest reported coupling loss to a semiconductor waveguide using lensed fibre. A device packaged using laser welding to fix the fibres had a total insertion loss of (3.9+or-0.1) dB giving less than 1.3 dB excess loss due to the packaging process.

机译：描述了适用于光电子设备集成的低光纤到光纤损耗的多量子阱（MQW）波导的设计。这些设备是通过大气压MOVPE生长的，并设计为与标准的透镜光纤匹配。测得的传播损耗为（0.75+或-0.1）dB cm / sup -1 /，光纤到光纤的损耗为（2.6+或-0.1）dB。分析表明，由于模式失配引起的耦合损耗小于（0.52+或-0.14）dB /小平面，据认为这是使用透镜光纤到半导体波导的最低报告耦合损耗。使用激光焊接固定光纤的设备的总插入损耗为（3.9+或-0.1）dB，由于封装过程而导致的额外损耗小于1.3 dB。

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《IEE Proceedings. Part J》 |1991年第5期|P.319-322|共4页
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Lynch T.G.; MacBean M.D.A.;
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正文语种 eng
中图分类光电子技术、激光技术;电工技术;
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1. Nondegenerate four-wave mixing wavelength conversion in low-loss passive InGaAsP-InP quantum-well waveguides [J] . Donnelly J.P., Le H.Q. IEEE Photonics Technology Letters . 1996,第5期

机译：低损耗无源InGaAsP-InP量子阱波导中的简并四波混频波长转换
2. Variation of frequency chirp with wavelength in an InGaAsP/InP multiple-quantum-well (MQW) waveguide electroabsorption modulator [J] . Whalen M.S., Wood T.H. IEEE Photonics Technology Letters . 1991,第5期

机译：InGaAsP / InP多量子阱（MQW）波导电吸收调制器中频率线性调频随波长的变化
3. Modeling, fabrication, and characterization of 1.43-μm InGaAsP/InP separate confinement heterostructure multiple quantum-well lasers [J] . Mikko Taskinen, Arja Heinaemaeki, Harri Lipsanen, Optical engineering . 1995,第9期

机译：1.43-μmInGaAsP / InP分离限制异质结构多量子阱激光器的建模，制造和表征
4. FABRICATION-TOLERANT, LOW-LOSS, AND HIGH-SPEED DIGITAL OPTICAL SWITCHES IN InGaAsP/InP QUANTUM WELLS [C] . M. N. Khan, J. E. Zucker, L. L. Buhl, European conference on optical communication;ECOC'95;Symposium on photonic versus electronic technologies in switching and interconnection;Symposium on broadband networks for video and multimedia services;European exhibition on optical communication;EEOC'95 . 1995

机译：InGaAsP / InP量子阱中的耐制造，低损耗和高速数字光学开关
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. A realistic fabrication and design concept for quantum gates based on single emitters integrated in plasmonic-dielectric waveguide structures [O] . Günter Kewes, Max Schoengen, Oliver Neitzke, -1

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7. Fabrication and characterization of InGaAsP/InP multi-quantum well buried-ridge waveguide laser diodes [O] . 2003

机译：InGaASP / INP多量子阱埋脊波导激光二极管的制造与表征
8. Nondegenerate Four-Wave Mixing Wavelength Conversion in Low-Loss Passive InGaAsP-InP Quantum-Well Waveguides [R] . Donnelly, J. P., Le, H. Q., Swanson, E. A., 1996

机译：低损耗无源InGaasp-Inp量子阱波导中的非简并四波混频波长转换

Design and fabrication of packaged InP/InGaAsP multiple quantum well waveguide components with very low insertion loss

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