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Monoalkyl Tin Nano‐Cluster Films Reveal a Low Environmental Impact under Simulated Natural Conditions

机译:单烷基锡纳米簇膜在模拟的自然条件下显示出较低的环境影响

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Recently, monoalkyl oxo-hydroxo tin clusters have emerged as a new class of metal-oxide resist to support the semiconductor industry's transition to extreme ultraviolet (EUV) lithography. Under EUV exposure, these tin-based clusters exhibit higher performance and wider process windows than conventional polymer materials. A promising new monoalkyl precursor, [(BuSn)(12)O-14(OH)(6)][OH](2) (BuSn), is still in its infancy in terms of film formation. However, understanding potential environmental effects could significantly affect future development as a commercial product. We synthesized and explored the toxicity of nano-BuSn in the alga Chlamydomonas reinhardtii and the crustacean Daphnia magna at exposure concentrations ranging from 0 to 250 mg/L. Nano-BuSn had no effect on C. reinhardtii growth rate irrespective of concentration, whereas high nanoparticle concentrations (>= 100 mg/L) increased D. magna immobilization and mortality significantly. To simulate an end-of-life disposal and leachate contamination, BuSn-coated film wafers were incubated in water at various pH values and temperatures for 14 and 90 d to investigate leaching rates and subsequent toxicity of the leachates. Although small quantities of tin (1.1-3.4% of deposited mass) leached from the wafers, it was insufficient to elicit a toxic response regardless of pH, incubation time, or temperature. The low toxicity of the tin-based thin films suggests that they can be an environmentally friendly addition to the material sets useful for semiconductor manufacturing. Environ Toxicol Chem 2019;00:1-8. (c) 2019 SETAC
机译:最近,单烷基氧-羟基锡簇已经出现,作为一类新型的金属氧化物抗蚀剂,可支持半导体工业向极紫外(EUV)光刻的过渡。与传统的聚合物材料相比,在EUV暴露下,这些锡基团簇具有更高的性能和更宽的工艺窗口。有前景的新型单烷基前体,[(BuSn)(12)O-14(OH)(6)] [OH](2)(BuSn),在成膜方面仍处于起步阶段。但是,了解潜在的环境影响可能会严重影响作为商业产品的未来发展。我们合成并研究了纳米BuSn在0至250 mg / L暴露浓度下对莱茵衣藻和甲壳类水蚤的毒性。无论浓度如何,纳米BuSn对莱茵衣藻的生长速率均无影响,而高浓度的纳米颗粒(> = 100 mg / L)则显着提高了D. magna的固定和死亡率。为了模拟报废处理和渗滤液污染,将涂有BuSn的薄膜晶圆在不同pH值和温度的水中孵育14到90 d,以研究渗滤液的浸出速率和后续毒性。尽管少量的锡(占沉积质量的1.1-3.4%)从晶片中浸出,但无论pH,孵育时间或温度如何,都不足以引起毒性反应。锡基薄膜的低毒性表明,它们可以作为对半导体制造有用的材料组的环保添加。 Environ Toxicol Chem 2019; 00:1-8。 (c)2019年SETAC

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