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首页> 外文期刊>IEE proceedings. Part G, Circuits, devices and systems >Design and optimisation of one-port RF MEMS resonators and related integrated circuits using ANN-based macromodelling approach
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Design and optimisation of one-port RF MEMS resonators and related integrated circuits using ANN-based macromodelling approach

机译：基于ANN的宏建模方法设计和优化单端口RF MEMS谐振器及相关集成电路

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摘要

The authors propose a modelling methodology which combines finite element method (FEM) and artificial neural networks (ANNs) techniques for the design and optimisation of integrated circuits (ICs) incorporating one-port radio frequency microelectromechanical systems (RF MEMS) resonating structures. The FEM is employed to predict the electro-mechanical performance of MEMS resonators. ANNs are utilised to model complex relationships between the physical parameters of the MEMS resonator and the corresponding electrical equivalent circuit parameters. These parameters are extracted directly from the FEM analysis and used for training the ANNs. It is shown that the relative error of the ANN model for a single MEMS device is less than 0.5% while the computational time is more than 40 times reduced compared to the FEM. To extend the capabilities of the proposed methodology, the developed ANN model is implemented into a commercially available circuit simulator, Agilent's Advanced Design System (ADS). This allows a seamless modelling process for the design and optimisation of MEMS resonators embedded ICs at both the device and circuit levels. As an example, a 30 MHz Pierce oscillator with the ANN model of a free-free beam MEMS resonator is optimised within the circuit simulator
机译：作者提出了一种结合有限元方法（FEM）和人工神经网络（ANN）技术的建模方法，用于设计和优化结合单端口射频微机电系统（RF MEMS）谐振结构的集成电路（IC）。 FEM被用来预测MEMS谐振器的机电性能。利用人工神经网络对MEMS谐振器的物理参数和相应的等效电路参数之间的复杂关系进行建模。这些参数直接从FEM分析中提取，并用于训练ANN。结果表明，与FEM相比，单个MEMS器件的ANN模型的相对误差小于0.5％，而计算时间却减少了40倍以上。为了扩展所提出方法的功能，已开发的ANN模型被实施到市售电路仿真器安捷伦的高级设计系统（ADS）中。这允许在器件和电路级进行无缝建模过程，以设计和优化MEMS谐振器嵌入式IC。例如，在电路仿真器中优化了具有自由束MEMS谐振器的ANN模型的30 MHz皮尔斯振荡器

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