Realising wide bandgap P-SiC-emitter lateral heterojunction bipolar transistors with low collector-emitter offset voltage and high current gain: a novel proposal using numerical simulation

Kumar M.J.; Reddy C.L.

首页> 外文期刊>IEE proceedings. Part G, Circuits, devices and systems >Realising wide bandgap P-SiC-emitter lateral heterojunction bipolar transistors with low collector-emitter offset voltage and high current gain: a novel proposal using numerical simulation

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Realising wide bandgap P-SiC-emitter lateral heterojunction bipolar transistors with low collector-emitter offset voltage and high current gain: a novel proposal using numerical simulation

机译：具有低集电极-发射极偏移电压和高电流增益的宽带隙P-SiC-发射极横向异质结双极晶体管的实现：一种使用数值模拟的新提议

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The authors report a novel method to reduce the collector-emitter offset voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In their approach, the collector-emitter offset voltage VCE(offset) is reduced drastically by eliminating the built-in potential difference between the emitter-base (EB) and collector-base (CB) junctions by using a SiC-on-Si P-emitter. It is demonstrated that the proposed dual-bandgap P-emitter HBT, together with the SiGe base and Schottky collector, not only has a very low VCE(offset) but also exhibits high current gain, reduced Kirk effect, excellent transient response and high cutoff frequency. The performance of the proposed device is evaluated in detail using two-dimensional device simulation, and a possible BiCMOS compatible fabrication procedure is also suggested.

机译：作者报告了一种使用双带隙发射极降低宽带隙SiC-P发射极横向HBT的集电极-发射极偏移电压的新颖方法。在他们的方法中，通过使用SiC-on-Si P消除了发射极-基极（EB）和集电极-基极（CB）结之间的内置电势差，大大降低了集电极-发射极之间的偏移电压VCE（offset）。 -发射器。结果表明，所提出的双带隙P发射极HBT与SiGe基极和肖特基集电极一起，不仅具有非常低的VCE（偏移），而且还具有高电流增益，降低的柯克效应，出色的瞬态响应和高截止频率频率。使用二维器件仿真对所提出器件的性能进行了详细评估，并提出了可能的BiCMOS兼容制造程序。

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《IEE proceedings. Part G, Circuits, devices and systems》 |2004年第5期|p.399-405|共7页
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Kumar M.J.; Reddy C.L.;
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正文语种 eng
中图分类基本电子电路;电工技术;计量学;
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2. Theoretical and experimental investigation of the collector-emitter offset voltage of AlGaAs/GaAs heterojunction bipolar transistors [J] . Bovolon N., Schultheis R. IEEE Transactions on Electron Devices . 1999,第4期

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Realising wide bandgap P-SiC-emitter lateral heterojunction bipolar transistors with low collector-emitter offset voltage and high current gain: a novel proposal using numerical simulation

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