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首页> 外文期刊>IEE Proceedings. Part J >Rapid slider LPE growth of InAs quantum wells
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Rapid slider LPE growth of InAs quantum wells

机译：InAs量子阱的滑块LPE快速生长

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The authors report the successful growth of InAs quantum wells from the liquid phase using liquid phase epitaxy (LPE). They demonstrate the capacity of a modified rapid slider LPE technique for the growth of InAs layers in the thickness range below the electron de Broglie wavelength. InAs quantum wells 2.5nm in thickness have been grown with excellent interface quality and thickness uniformity comparable to molecular beam or vapour phase techniques such as MBE or MOVPE. InAs quantum wells were grown closely lattice-matched to InAsSbP quaternary alloy confining layers having a much wider energy bandgap (0.5eV). These quantum wells embedded between proper lattice-matched confining layers with a wider bandgap form the key element of a promising structure for the fabrication of mid-infrared LEDs and lasers based on InAs quantum wells. Some basic characteristics of the kinetics of InAs heteroepitaxy on InAsSbP quaternary surfaces are reported and the extent to which the main experimental parameters control the resulting layer thickness is determined.
机译：作者报告了使用液相外延（LPE）从液相成功生长InAs量子阱的过程。他们证明了改进的快速滑块LPE技术能够在电子德布罗意波长以下的厚度范围内生长InAs层。与分子束或气相技术（例如MBE或MOVPE）相比，已经生长了厚度为2.5nm的InAs量子阱，具有出色的界面质量和厚度均匀性。 InAs量子阱与具有更宽能带隙（0.5eV）的InAsSbP四元合金约束层紧密晶格匹配地生长。这些量子阱嵌入在具有较宽的带隙的适当晶格匹配的限制层之间，构成了用于制造基于InAs量子阱的中红外LED和激光器的有前途的结构的关键要素。报告了InAsSbP四元表面上InAs异质外延动力学的一些基本特征，并确定了主要实验参数控制所得层厚度的程度。

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