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首页> 外文期刊>Industrial Electronics Magazine, IEEE >Innovative and Reliable Power Modules: A Future Trend and Evolution of Technologies
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Innovative and Reliable Power Modules: A Future Trend and Evolution of Technologies

机译：创新和可靠的电源模块：技术的未来趋势和发展

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Since the introduction of the first power module by Semikron in 1975, many innovations have been made to improve the thermal, electrical, and mechanical performance of power modules. These innovations in packaging technology focus on the enhancement of the heat dissipation and thermal cycling capability of the modules. Thermal cycles, caused by varying load and environmental operating conditions, induce high mechanical stress in the interconnection layers of the power module due to the different coefficients of thermal expansion (CTE), leading to fatigue and growth of microcracks in the bonding materials. As a result, the lifetime of power modules can be severely limited in practical applications. Furthermore, to reduce the size and weight of converters, the semiconductors are being operated at higher junction temperatures. Higher temperatures are especially of great interest for use of wide-?bandgap materials, such as SiC and GaN, because these materials leverage their material characteristics, particularly at higher temperatures. To satisfy these tightened requirements, on the one hand, conventional power modules, i.e., direct bonded Cu (DBC)-based systems with bond wire contacts, have been further improved. On the other hand, alternative packaging techniques, e.g., chip embedding into printed circuit boards (PCBs) and power module packaging based on the selective laser melting (SLM) technique, have been developed, which might constitute an alternative to conventional power modules in certain applications.
机译：自1975年Semikron推出第一个电源模块以来，已经进行了许多创新，以改善电源模块的热，电和机械性能。封装技术的这些创新着眼于增强模块的散热和热循环能力。由变化的负载和环境操作条件引起的热循环由于热膨胀系数（CTE）不同而在功率模块的互连层中引起高机械应力，从而导致疲劳和粘结材料中微裂纹的增长。结果，在实际应用中会严重限制电源模块的使用寿命。此外，为了减小转换器的尺寸和重量，半导体在更高的结温下运行。高温对于使用宽带隙材料（例如SiC和GaN）尤为重要，因为这些材料会利用其材料特性，尤其是在高温下。为了满足这些严格的要求，一方面，常规的功率模块，即具有键合引线触点的直接键合Cu（DBC）基系统已得到进一步改进。另一方面，已经开发了替代封装技术，例如，将芯片嵌入印刷电路板（PCB）中以及基于选择性激光熔化（SLM）技术的功率模块封装，在某些情况下可能构成常规功率模块的替代方案应用程序。

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