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首页> 外文期刊>IEEE Journal of Quantum Electronics >High-Power Ultralow-Chirp 10-Gb/s Electroabsorption Modulator Integrated Laser With Ultrashort Photocarrier Lifetime
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High-Power Ultralow-Chirp 10-Gb/s Electroabsorption Modulator Integrated Laser With Ultrashort Photocarrier Lifetime

机译：高功率超低线性调频10 Gb / s电吸收调制器集成激光器，具有超短的光载波寿命

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摘要

A high-power, ultralow-chirp electroabsorption modulator (EAM) integrated with a distributed-feedback laser diode (EML) having ultrashort lifetime of photogenerated holes in the EAM quantum-well (QW) structure is reported for the first time. A shallow QW structure having a small valence band offset to enhance the sweepout of photogenerated holes was employed as EAM absorption layer. The measured hole lifetimes were 7-11 ps, and the measured frequency chirp (alpha-parameter) was low or negative at low EAM reverse bias voltages even under high optical output power conditions. Successful 10-Gb/s 80-km normal- dispersion single-mode fiber transmission (chromatic dispersion D velence 1600 psm) and the record average fiber optical output power (P_(f)) of +5.3 dBm were achieved at 25 deg C. In addition, semicooled operation of EML at enhanced bit rates has been demonstrated for application in small-form-factor protocol-agnostic optical transceivers. A 10.7-Gb/s 1600-psm transmission was achieved at 45 deg C and P_(f) velence +3.0 dBm.
机译：首次报道了与分布式反馈激光二极管（EML）集成的高功率，超低线性调频电吸收调制器（EAM），该二极管具有EAM量子阱（QW）结构中光生空穴的超短寿命。具有小的价带偏移以增强光生空穴的清除的浅QW结构用作EAM吸收层。测得的空穴寿命为7-11 ps，即使在高光输出功率条件下，在低EAM反向偏置电压下测得的频率线性调频（阿尔法参数）也较低或为负。在25度下成功实现了10 Gb / s 80 km正常色散单模光纤传输（色散D速度1600 ps / nm）和创纪录的平均光纤输出功率（P_（f））+5.3 dBm C.此外，已证明EML以增强的比特率进行半冷却操作，可用于与协议无关的小型光收发器。在45摄氏度和P_（f）速度+3.0 dBm时实现了10.7 Gb / s 1600 ps / nm的传输。

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