Photoluminescence and photoluminescence excitation spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies

Hongtao Jiang; Minsky M.

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Photoluminescence and photoluminescence excitation spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies

机译：In / sub 0.2 / Ga / sub 0.8 / N-GaN量子阱的光致发光和光致发光激发光谱：实验研究与理论研究的比较

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InGaN-GaN represents an important heterostructure with applications in electronics and optoelectronics. It also offers a system where we can study the effects of interface roughness, alloy clustering, and the piezoelectric effect. In the paper, we examine how these factors influence the photoluminescence and excitation photoluminescence in InGaN-GaN quantum wells. We examine the Stokes shift as a function of the excitation level and doping and relate the values to the piezoelectric effect and disorder in the system. Detailed comparisons are made with experimental results.

机译：InGaN-GaN代表着重要的异质结构，在电子和光电子学中都有应用。它还提供了一个系统，我们可以在其中研究界面粗糙度，合金团簇和压电效应的影响。在本文中，我们研究了这些因素如何影响InGaN-GaN量子阱中的光致发光和激发光致发光。我们检查了斯托克斯频移作为激励水平和掺杂的函数，并将其值与系统中的压电效应和无序相关。与实验结果进行了详细的比较。

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《IEEE Journal of Quantum Electronics》 |1999年第10期|P.1483-1490|共8页
作者
Hongtao Jiang; Minsky M.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
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1. Photoluminescence and photoluminescence excitation spectra of In0.2Ga0.8N-GaN quantum wells: comparison betweenexperimental and theoretical studies [J] . Hongtao Jiang, Minsky M., Keller S., IEEE Journal of Quantum Electronics . 1999,第10期

机译：In0.2Ga0.8N-GaN量子阱的光致发光和光致发光激发光谱：实验研究与理论研究的比较
2. Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells [J] . S. Schulz, D. S. P. Tanner, E. P. OReilly, Applied Physics Letters . 2016,第22期

机译：m面InGaN / GaN量子阱的光致发光和光致发光激发光谱的理论和实验分析
3. EXPERIMENTAL AND THEORETICAL STUDIES OF ABSORPTION AND PHOTOLUMINESCENCE EXCITATION SPECTRA OF POLY(P-PHENYLENE VINYLENE) [J] . Yu JW., Chuang KR., Chao CL., Synthetic Metals . 1995,第1期

机译：聚对苯二甲酸乙二酯的吸收和光致发光光谱的实验和理论研究
4. Theoretical and experimental study of polarization- dependent photoluminescence in In_(0.2)Ga_(0.8)As/GaAs quantum wires [C] . J. Shuttlewood, K. Ko, P. Bhattacharya, International symposium on compound semiconductors . 1995

机译：In_（0.2）Ga_（0.8）As / GaAs量子线中偏振相关的光致发光的理论和实验研究
5. Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules. [D] . Shen, Yaoming. 2008

机译：聚甲基丙烯酸甲酯和量子点分子中硒化镉/硫化锌胶体纳米晶体的光致发光光谱研究。
6. Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots [O] . Qing Yuan, Baolai Liang, Chuan Zhou, 2018

机译：温度和激发强度对InGaAs / GaAs表面量子点光致发光特性的相互作用
7. Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells [O] . Schulz, Stefan, Tanner, Daniel S. P., O'Reilly, Eoin P., 2017

机译：m面InGaN / GaN量子阱的光致发光和光致发光激发光谱的理论和实验分析

Photoluminescence and photoluminescence excitation spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies

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