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首页> 外文期刊>Quantum Electronics, IEEE Journal of >Mechanisms of the Asymmetric Light Output Enhancements in (a) -Plane GaN Light-Emitting Diodes With Photonic Crystals
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Mechanisms of the Asymmetric Light Output Enhancements in (a) -Plane GaN Light-Emitting Diodes With Photonic Crystals

机译:具有光子晶体的平面GaN发光二极管 (a) -平面GaN发光二极管中非对称光输出增强的机理

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摘要

The unique properties of nonpolar GaN light-emitting diodes (LEDs) have the advantages of generating polarized light emission. The employment of asymmetric 2-D photonic crystals (PhCs) can further enhance the light polarization ratio. In addition, it was generally recognized that the Purcell effect can increase the internal quantum efficiency of the LEDs with PhCs. In this paper, we study the properties of optical modes from different crystal planes. The Purcell effect is analyzed based on the PhCs and material crystal orientations. With different transition probability of the polarized photons in valence bands, the corresponding Purcell effect enhancement on the quantum efficiency varies.
机译:非极性GaN发光二极管(LED)的独特特性具有产生偏振光发射的优势。采用非对称二维光子晶体(PhCs)可以进一步提高光偏振比。此外,人们普遍认为,赛尔效应可以提高具有PhC的LED的内部量子效率。在本文中,我们研究了来自不同晶面的光学模式的特性。根据PhC和材料晶体取向分析赛尔效应。在价带中极化光子的跃迁概率不同时,相应的珀塞尔效应对量子效率的增强作用也随之变化。

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